JAN2N2906AUA/TR NPN Transistor by ON Semiconductor ?C TO-220 Package, High Power

  • This transistor provides efficient switching and amplification, enabling precise control in electronic circuits.
  • JAN2N2906AUA/TR features a specified gain that ensures stable performance in signal processing tasks.
  • The compact TO-18 package offers board-space savings, facilitating integration into dense circuit layouts.
  • Ideal for use in low-power amplifiers or switching applications, it supports reliable operation in various devices.
  • Manufactured to meet strict military standards, it ensures long-term reliability under demanding conditions.
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产品上方询盘

JAN2N2906AUA/TR Overview

The JAN2N2906AUA/TR is a high-performance PNP bipolar junction transistor designed for switching and amplification in industrial and military-grade applications. It offers robust electrical characteristics with a collector-to-emitter voltage rating suitable for medium power operations. This transistor is built to meet stringent military standards, ensuring reliability under harsh environmental conditions. Its complementary design and low saturation voltage make it ideal for efficient signal processing and power management tasks. Sourcing this device through IC Manufacturer guarantees adherence to quality and consistency for mission-critical electronics.

JAN2N2906AUA/TR Key Features

  • High voltage rating: With a collector-emitter voltage of 60 V, it supports reliable operation in medium power circuits, enhancing design flexibility.
  • Military standard qualification: Ensures robust performance and durability in demanding environments where reliability is critical.
  • Low collector saturation voltage: Reduces power loss and improves efficiency in switching applications, benefiting thermal management.
  • Complementary transistor pairing: Often used alongside NPN counterparts for amplifier and switching circuits, simplifying circuit design.

JAN2N2906AUA/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 800 mA
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 100 to 300 (min to max)
Operating Temperature Range -65 to +200 ??C

JAN2N2906AUA/TR Advantages vs Typical Alternatives

This transistor stands out due to its military-grade certification, providing enhanced reliability compared to commercial-grade devices. Its balanced voltage and current ratings offer versatility for medium power applications while maintaining low saturation voltage for efficient switching. The wide operating temperature range and robust gain characteristics make it superior in terms of performance stability and longevity under demanding conditions.

Typical Applications

  • Signal amplification in industrial control systems where stable gain and low distortion are required for accurate processing.
  • Switching components in power management circuits, benefiting from its low saturation voltage to reduce power loss.
  • Complementary stage amplifiers paired with NPN transistors in audio and radio frequency circuits for balanced performance.
  • Military and aerospace electronics demanding high reliability and consistent operation across extreme temperatures.

JAN2N2906AUA/TR Brand Info

The JAN2N2906AUA/TR is a product within the JAN (Joint Army-Navy) specification series, recognized for meeting rigorous military standards. This lineage ensures stringent quality control, environmental testing, and reliability certifications. The transistor is manufactured by a trusted supplier adhering to these high standards, making it suitable for defense and industrial applications requiring dependable semiconductor components.

FAQ

What is the maximum collector current rating of the JAN2N2906AUA/TR?

The maximum collector current for this transistor is rated at 800 mA. This allows the device to handle moderate power levels suitable for switching and amplification tasks in various applications.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency of up to 100 MHz, it supports moderate high-frequency operation, making it suitable for RF amplifiers and signal processing circuits that operate within this frequency range.

What temperature range can the JAN2N2906AUA/TR reliably operate in?

The device is designed to operate within a wide temperature range from -65??C up to +200??C, providing excellent reliability for use in harsh environmental and military-grade applications.

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产品中间询盘

How does the low collector saturation voltage benefit circuit design?

A low collector saturation voltage reduces power dissipation and heat generation during switching, improving overall circuit efficiency and permitting more compact thermal management solutions.

Is this transistor compatible with NPN devices for complementary amplifier configurations?

Yes, this PNP transistor is often paired with complementary NPN transistors such as the 2N2222 series for push-pull amplifier stages and other balanced circuit topologies, facilitating versatile design options.

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