JANTX2N3501UB/TR NPN Power Transistor by JANTX | TO-3 Package | High Voltage Switch

  • This transistor provides efficient switching capabilities, enabling improved control in electronic circuits.
  • Featuring a high voltage rating, it supports demanding applications requiring robust performance.
  • The compact package design reduces PCB space, facilitating streamlined device layouts.
  • Ideal for power regulation tasks in industrial equipment, enhancing system stability and responsiveness.
  • Manufactured under strict quality standards to ensure consistent reliability and long operational life.
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JANTX2N3501UB/TR Overview

The JANTX2N3501UB/TR is a high-performance NPN bipolar junction transistor designed for demanding power amplification and switching applications. It features robust electrical characteristics suitable for high voltage and current conditions, making it ideal for military and industrial use. With a collector-emitter voltage rating of 100V and a collector current capacity up to 15A, this transistor supports reliable operation under harsh environments. Its hermetically sealed TO-3 package enhances thermal management and long-term durability. The device is manufactured to meet stringent quality standards, ensuring consistent performance in critical applications. For detailed semiconductor solutions, visit IC Manufacturer.

JANTX2N3501UB/TR Key Features

  • High collector current of 15A: Enables handling of significant power loads efficiently in switching and amplification circuits.
  • Collector-emitter voltage rated at 100V: Supports high-voltage applications, ensuring device reliability under elevated voltage stress.
  • TO-3 hermetic metal package: Provides superior thermal dissipation and environmental protection, enhancing device longevity.
  • Gain bandwidth product of 4.5 MHz: Ensures good frequency response for medium-frequency amplification tasks.

JANTX2N3501UB/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current Continuous (IC) 15 A
Power Dissipation (Ptot) 115 W
Gain Bandwidth Product (fT) 4.5 MHz
DC Current Gain (hFE) 20?C70 ??
Operating Temperature Range (TJ) -65 to +200 ??C
Package Type TO-3 ??

JANTX2N3501UB/TR Advantages vs Typical Alternatives

This transistor offers superior power handling and voltage ratings compared to many standard BJTs, making it well-suited for industrial and military-grade applications. Its hermetic TO-3 package ensures enhanced thermal performance and environmental resistance, which typical plastic-packaged devices may lack. The wide operating temperature range and robust current gain contribute to reliable, precise operation in critical systems where stability and durability are paramount.

Typical Applications

  • Power amplification stages in industrial and military radio frequency transmitters, benefiting from the device??s high voltage and current capabilities.
  • Switching regulators and power supplies requiring robust, high-current transistors for efficient energy conversion and control.
  • Motor control circuits where reliable handling of inductive loads and thermal stress is necessary.
  • High-reliability environments such as aerospace or defense electronics, leveraging the hermetic package and extended temperature range.

JANTX2N3501UB/TR Brand Info

The JANTX2N3501UB/TR is part of a series of military-grade transistors known for their rugged construction and dependable performance. Manufactured under strict quality control, this product meets or exceeds MIL-STD specifications, ensuring suitability for high-reliability applications. Its design focuses on delivering consistent electrical characteristics and mechanical robustness, supporting long lifecycle requirements in demanding industrial and defense sectors.

FAQ

What are the maximum voltage and current ratings for this transistor?

This transistor supports a maximum collector-emitter voltage of 100V and a continuous collector current of up to 15A, making it capable of handling high power loads safely within specified limits.

What packaging does this transistor use and why is it important?

The device is housed in a TO-3 hermetically sealed metal package, which provides excellent thermal conductivity and environmental protection, crucial for maintaining performance in harsh operating conditions.

Can this transistor be used in high-frequency applications?

With a gain bandwidth product of 4.5 MHz, this transistor is suitable for medium-frequency applications, including RF amplification, though it is not optimized for very high-frequency operation.

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产品中间询盘

What is the operating temperature range for this device?

The transistor operates reliably from -65??C up to +200??C, allowing it to function in extreme temperature environments commonly encountered in military and industrial settings.

How does the gain vary across the product??s operating conditions?

The DC current gain ranges between 20 and 70 depending on operating conditions, providing stable amplification characteristics suitable for power control and switching applications.

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