2N2432UB/TR ON Semiconductor Transistor NPN 2W TO-39 Metal Can Package

  • This device amplifies signals efficiently, enabling clearer and stronger electronic communication.
  • It operates within specific electrical parameters, ensuring stable performance under varied conditions.
  • The package design offers a compact footprint, saving valuable board space in circuit layouts.
  • Ideal for use in low-noise signal amplification where maintaining signal integrity is crucial.
  • Manufactured to meet standard quality controls, supporting consistent and reliable operation over time.
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2N2432UB/TR Overview

The 2N2432UB/TR is a high-performance bipolar junction transistor designed for reliable switching and amplification in industrial and electronic applications. This transistor offers a balanced combination of voltage handling and gain characteristics, making it suitable for general-purpose use in analog and digital circuits. Packaged in a robust TO-18 metal can, it ensures excellent thermal stability and durability under challenging operating conditions. Sourcing professionals and design engineers will appreciate its consistent electrical parameters and ease of integration into complex semiconductor assemblies. For detailed procurement and technical support, visit IC Manufacturer.

2N2432UB/TR Key Features

  • High current gain (hFE): Provides efficient amplification, reducing the need for additional gain stages in circuit design.
  • Collector-Emitter voltage (Vceo) rating: Supports moderate voltage levels, ensuring operational reliability in various industrial environments.
  • Low noise figure: Ideal for signal processing applications where noise minimization is critical for signal integrity.
  • Durable TO-18 package design: Enhances thermal dissipation and mechanical protection, improving device longevity in harsh conditions.

2N2432UB/TR Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 30 V
Collector Current (Ic) 100 mA
Power Dissipation (Pd) 300 mW
DC Current Gain (hFE) 40 to 300 (depending on operating conditions)
Transition Frequency (fT) 100 MHz (typical)
Noise Figure Low noise, suitable for audio frequency applications
Package Type TO-18 Metal Can
Operating Temperature Range -65??C to +200??C

2N2432UB/TR Advantages vs Typical Alternatives

This transistor offers a superior balance of gain and voltage ratings compared to typical general-purpose NPN transistors, enhancing circuit sensitivity and signal fidelity. Its low noise figure makes it preferable in audio and sensor signal paths, while the robust TO-18 packaging ensures excellent thermal management and long-term reliability. These features collectively provide engineers with a dependable option for industrial applications requiring stable performance under variable environmental conditions.

Typical Applications

  • Low-level audio amplification circuits, where the device??s low noise and adequate gain improve sound clarity and minimize distortion in signal paths.
  • Switching applications in control systems that require reliable transistor operation at moderate voltage and current levels.
  • Signal amplification in sensor interface electronics, benefiting from its high gain and low noise characteristics.
  • General-purpose amplification and switching tasks in industrial electronic assemblies, leveraging its robust packaging for durability.

2N2432UB/TR Brand Info

The 2N2432UB/TR is manufactured by a leading semiconductor provider known for delivering high-quality, industrial-grade transistors. This product line emphasizes stringent quality control and consistent performance metrics, making it a trusted choice for engineers and sourcing specialists. The brand supports comprehensive datasheets and application notes to aid in seamless integration into complex electronic systems.

FAQ

What type of transistor is the 2N2432UB/TR?

The device is an NPN bipolar junction transistor (BJT), widely used for switching and amplification in various electronic circuits. It features a standard transistor structure suitable for low to medium power applications.

What is the maximum collector current rating?

The maximum collector current for this transistor is 100 mA, ensuring it can handle moderate current loads typical in control and amplification circuitry without compromising reliability.

What package does the 2N2432UB/TR come in?

This transistor is housed in a TO-18 metal can package, which provides enhanced thermal conductivity and mechanical protection, suitable for industrial environments requiring stable operation.

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What frequency response can be expected from the device?

The typical transition frequency (fT) is around 100 MHz, making it adequate for audio and low-frequency RF applications where moderate speed and gain are necessary.

Is the 2N2432UB/TR suitable for high-temperature applications?

Yes, the transistor supports an operating temperature range from -65??C up to +200??C, making it suitable for demanding industrial applications exposed to wide temperature variations.

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