JAN2N2369AUB/TR NPN Transistor by JAN – High Gain, TO-92 Package

  • This device performs signal amplification to enhance circuit performance and ensure clear output.
  • It supports a frequency range suitable for high-speed data transmission, improving signal integrity.
  • The compact package design reduces board space, facilitating integration into dense electronic layouts.
  • JAN2N2369AUB/TR is ideal for RF communication systems, boosting signal strength in wireless applications.
  • Manufactured with stringent quality controls, it offers consistent operation under varied environmental conditions.
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产品上方询盘

JAN2N2369AUB/TR Overview

The JAN2N2369AUB/TR is a high-performance NPN bipolar junction transistor optimized for switching and amplification applications. Designed to operate efficiently within military and industrial environments, this transistor offers reliable gain characteristics and robust voltage handling. The device features a small-outline SOT-23 surface-mount package, enabling compact PCB layouts and enhanced thermal management. Ideal for engineers and sourcing specialists seeking a dependable transistor for signal processing or low-noise amplification, this part delivers consistent performance across a temperature range of ?C55??C to +125??C. Manufactured by IC Manufacturer, it meets stringent quality standards required for demanding electronic systems.

JAN2N2369AUB/TR Key Features

  • High current gain (hFE): Enables efficient signal amplification, improving overall circuit sensitivity and performance.
  • Wide voltage rating: Supports collector-emitter voltage up to 40 V, suitable for various switching and amplification tasks.
  • Low collector-emitter saturation voltage: Minimizes power dissipation, enhancing energy efficiency in switching applications.
  • Surface-mount SOT-23 package: Facilitates high-density PCB designs with excellent thermal conductivity and mechanical robustness.
  • Wide operating temperature range (?C55??C to +125??C): Ensures reliable operation under harsh environmental conditions.

JAN2N2369AUB/TR Technical Specifications

Parameter Value Unit
Transistor Type NPN Bipolar Junction ?C
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.8 A
DC Current Gain (hFE) 100 to 300 ?C
Transition Frequency (fT) 100 MHz
Power Dissipation (PD) 350 mW
Operating Temperature Range ?C55 to +125 ??C
Package SOT-23 Surface Mount

JAN2N2369AUB/TR Advantages vs Typical Alternatives

This transistor stands out for its balance of high current gain, low saturation voltage, and robust voltage ratings, offering enhanced sensitivity and efficiency. Compared to typical counterparts, it delivers superior thermal performance and reliability in compact surface-mount form factors. These features make it suitable for critical signal amplification and fast switching, ensuring consistent operation in demanding industrial and defense-grade electronic systems.

Typical Applications

  • Low-level signal amplification in communication equipment where noise minimization and gain stability are essential for clear signal processing.
  • Switching elements in power management circuits, benefiting from low saturation voltage to reduce energy losses.
  • Interface stages in industrial control systems requiring reliable operation over wide temperature ranges.
  • General-purpose amplification and switching in military-grade electronics, leveraging its JAN (Joint Army-Navy) certification for dependable performance.

JAN2N2369AUB/TR Brand Info

This transistor belongs to the JAN series, indicating compliance with military standards for ruggedness and reliability. The JAN2N2369AUB/TR is produced under strict quality controls to meet the demanding specifications of defense and aerospace applications. Its packaging and electrical characteristics reflect the manufacturer??s commitment to delivering high-quality semiconductor components tailored for harsh operating environments and critical electronic functions.

FAQ

What is the maximum collector current rating of this transistor?

The device supports a maximum collector current of 0.8 A, suitable for low to moderate power switching and amplification tasks in electronic circuits.

What package type does the transistor come in, and why is it beneficial?

It is supplied in a SOT-23 surface-mount package, which enables compact PCB designs and improved thermal dissipation, making it ideal for modern densely populated electronic assemblies.

Can the transistor operate reliably at high temperatures?

Yes, it is rated for an operating temperature range from ?C55??C to +125??C, ensuring stable performance in harsh industrial and military environments.

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产品中间询盘

What voltage ratings are important for this transistor?

The collector-emitter voltage rating is 40 V, and collector-base voltage is 60 V, making it suitable for a variety of switching and amplification applications that require moderate voltage handling capability.

How does the device??s current gain impact its application?

The transistor??s current gain range of 100 to 300 allows for efficient amplification of weak signals, improving circuit sensitivity and reducing the need for additional amplification stages.

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