JANHCB2N2906A JANHCB Power Module – High-Efficiency Switching, TO-247 Package

  • This device delivers precise control functions, enabling efficient system management in embedded applications.
  • Equipped with a high-speed interface, it ensures quick data processing critical for responsive operations.
  • The compact CBZ package reduces board space, facilitating integration into designs with limited area.
  • Ideal for industrial automation, JANHCB2N2906A supports real-time monitoring and control tasks effectively.
  • Manufactured under strict quality standards, it offers consistent performance and long-term reliability.
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JANHCB2N2906A Overview

The JANHCB2N2906A is a high-performance PNP bipolar junction transistor engineered for reliable switching and amplification tasks in industrial and electronic circuits. Designed with robust electrical characteristics, it supports a maximum collector current of 600mA and a collector-emitter voltage rating of up to 40V, making it suitable for medium-power applications. This transistor offers excellent gain and switching speeds, ensuring efficient operation in control, driver, and amplifier stages. Its rugged construction facilitates stable performance under varying temperature and load conditions. For sourcing and design integration, this device provides a dependable solution backed by industry-standard specifications from IC Manufacturer.

JANHCB2N2906A Key Features

  • High collector current capability: Supports up to 600mA, enabling effective handling of moderate power loads without compromising device integrity.
  • Collector-emitter voltage rating of 40V: Allows operation in circuits requiring moderate voltage headroom, enhancing versatility in various industrial applications.
  • Low saturation voltage: Minimizes power loss during switching, improving overall circuit efficiency and thermal management.
  • Wide operating temperature range: Ensures stable transistor performance in demanding environmental conditions, increasing reliability and device lifespan.

JANHCB2N2906A Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)40V
Collector-Base Voltage (VCBO)60V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)600mA
DC Current Gain (hFE)100?C300??
Transition Frequency (fT)100MHz
Power Dissipation (PD)625mW
Operating Junction Temperature (TJ)-65 to +200??C

JANHCB2N2906A Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate voltage ratings and high current capacity, which enhances switching efficiency and gain stability compared to generic PNP transistors. Its low saturation voltage reduces power dissipation, making it more energy-efficient. Additionally, the wide operating temperature range and consistent gain characteristics provide higher reliability and performance in industrial environments, delivering a competitive advantage in both analog and switching applications.

Typical Applications

  • Switching circuits in industrial control systems where moderate power and voltage handling are required, delivering reliable operation in harsh environments.
  • Amplifier stages in audio and signal processing equipment, providing stable gain and low distortion.
  • Driver transistors for relay and solenoid control, enabling efficient load activation with minimal loss.
  • General-purpose amplification and switching in automotive electronics, supporting robust performance under temperature variations.

JANHCB2N2906A Brand Info

Manufactured by a leading semiconductor producer, this device adheres to stringent quality and reliability standards typical of the JAN series. It benefits from proven design and material technologies that ensure consistent electrical characteristics and durability. The brand is recognized for providing industrial-grade components tailored for demanding electronic control and amplification applications, making the JANHCB2N2906A a trusted choice for engineers and sourcing specialists worldwide.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current is rated at 600mA. This allows the device to handle moderate power loads effectively in switching and amplification circuits without thermal stress issues.

Can this transistor operate at high frequencies?

Yes, the transistor features a transition frequency (fT) of approximately 100MHz, making it suitable for high-speed switching and signal amplification tasks in many industrial and consumer applications.

What are the voltage limits for safe operation?

The device can safely operate with a collector-emitter voltage up to 40V, a collector-base voltage up to 60V, and an emitter-base voltage up to 5V. Exceeding these values risks damaging the transistor through breakdown or excessive leakage currents.

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产品中间询盘

How does the transistor perform under temperature variations?

It is designed to operate reliably across a wide junction temperature range from -65??C to +200??C, ensuring stable performance in both cold and high-temperature industrial environments.

What are typical applications for this transistor in industrial electronics?

This PNP transistor is commonly used in switching circuits, driver stages for relays and solenoids, audio amplification, and general-purpose analog and digital circuits requiring moderate power and voltage handling.

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