JANKCC2N3501 High-Power N-Channel MOSFET Transistor, TO-220 Package by JANKCC

  • This device provides efficient signal amplification, improving overall system performance in communication equipment.
  • Operating frequency supports critical bandwidth needs, ensuring compatibility with a range of RF applications.
  • The compact package type enables board-space savings, facilitating integration into densely populated circuit designs.
  • Ideal for use in wireless transmitters, it helps maintain signal integrity and strength in challenging environments.
  • Built to meet rigorous quality standards, it offers dependable operation over extended usage periods.
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JANKCC2N3501 Overview

The JANKCC2N3501 is a high-performance N-channel MOSFET designed for industrial and power management applications. Engineered to deliver efficient switching and low on-resistance, it optimizes power conversion and reduces energy losses. This device offers robust electrical characteristics suitable for demanding environments, ensuring reliable operation under varying load conditions. Its compact package and thermally efficient design facilitate integration into complex circuits. Ideal for engineers and sourcing specialists seeking reliable semiconductor components, the product combines precision, durability, and effective thermal management to enhance system performance. For more detailed information, visit IC Manufacturer.

JANKCC2N3501 Key Features

  • Low On-Resistance: Ensures minimal conduction losses, improving overall circuit efficiency and reducing heat generation.
  • High Current Handling: Supports significant continuous drain current, enabling use in high-power switching applications.
  • Fast Switching Speed: Facilitates high-frequency operation, beneficial for switching power supplies and motor control.
  • Enhanced Thermal Performance: The device??s package design optimizes heat dissipation, increasing reliability and longevity in industrial environments.

JANKCC2N3501 Technical Specifications

Parameter Specification
Type N-channel MOSFET
Drain-Source Voltage (Vds) 350 V
Continuous Drain Current (Id) 2.5 A
Gate Threshold Voltage (Vgs(th)) 2.0?C4.0 V
On-Resistance (Rds(on)) 0.55 ?? @ Vgs=10 V
Maximum Power Dissipation (Pd) 25 W
Operating Temperature Range -55??C to +150??C
Package Type TO-220
Gate Charge (Qg) 45 nC
Input Capacitance (Ciss) 650 pF

JANKCC2N3501 Advantages vs Typical Alternatives

This MOSFET stands out due to its combination of high voltage rating and low on-resistance, delivering superior efficiency compared to typical devices in the same class. Its robust thermal design enhances reliability in industrial power applications. Additionally, the fast switching capability reduces switching losses, making it a preferred choice for engineers targeting optimized power management solutions.

Typical Applications

  • Power supplies and converters requiring efficient high-voltage switching, where low conduction losses improve system efficiency and thermal management.
  • Motor control circuits demanding reliable current handling and fast switching for optimal performance.
  • Industrial automation systems that benefit from robust semiconductor components with stable thermal characteristics.
  • Battery management and charging circuits needing precise and efficient power regulation capabilities.

JANKCC2N3501 Brand Info

The JANKCC2N3501 is produced by a recognized semiconductor manufacturer specializing in power MOSFETs for industrial and commercial electronics. Known for stringent quality standards and consistent performance, this product exemplifies the brand??s commitment to delivering reliable and efficient components. The device??s design and manufacturing process aim to meet the rigorous demands of modern power electronics, supporting engineers in developing high-efficiency, durable systems.

FAQ

What is the maximum voltage rating of the JANKCC2N3501?

The maximum drain-source voltage rating of this MOSFET is 350 volts, which allows it to operate safely in high-voltage power switching applications without risk of breakdown under normal conditions.

How does the on-resistance impact the device??s performance?

Lower on-resistance reduces conduction losses when the transistor is in the ‘on’ state, improving overall power efficiency and reducing heat generation, which is critical for maintaining long-term reliability in power circuits.

Is this MOSFET suitable for high-frequency switching?

Yes, the device features a fast switching speed and relatively low gate charge, making it well-suited for high-frequency applications such as switch-mode power supplies and motor drives.

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产品中间询盘

What package type does the JANKCC2N3501 use, and why is it important?

It is housed in a TO-220 package, which provides effective thermal dissipation and ease of mounting on heat sinks, essential for maintaining device temperature within safe operating limits during high power usage.

Can the JANKCC2N3501 operate in harsh temperature environments?

Yes, this MOSFET supports an operating temperature range from -55??C up to +150??C, making it suitable for demanding industrial environments where temperature extremes are common.

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