2N3636UB/TR Overview
The 2N3636UB/TR is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It delivers reliable operation with a focus on medium power handling and moderate gain, making it suitable for a wide range of industrial and consumer electronics. This transistor is optimized for efficient current amplification while maintaining stable operation under varying load conditions. Its robust construction ensures dependable performance in demanding environments. For engineers and sourcing specialists seeking a versatile transistor solution, the 2N3636UB/TR offers a balanced combination of electrical characteristics and mechanical reliability. Available through IC Manufacturer, it supports streamlined integration into complex electronic systems.
2N3636UB/TR Key Features
- Medium power handling capability: Supports collector current up to 1 A, enabling effective use in switching and amplification circuits requiring moderate power levels.
- Typical gain (hFE) range: Provides stable current gain between 40 and 300, allowing precise signal amplification tailored to control circuit demands.
- Collector-emitter voltage (VCEO): Rated at 30 V maximum, ensuring reliable operation within standard voltage limits for industrial applications.
- Transition frequency (fT): Approximately 40 MHz, suitable for medium-frequency amplification tasks and improving signal integrity in communication circuits.
2N3636UB/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 30 | V |
| Collector-Base Voltage (VCBO) | 40 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 1 | A |
| Power Dissipation (Ptot) | 0.8 | W |
| DC Current Gain (hFE) | 40?C300 | ?C |
| Transition Frequency (fT) | 40 | MHz |
| Operating Junction Temperature (Tj) | +150 | ??C |
2N3636UB/TR Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage rating, current capacity, and gain that compares favorably against typical discrete transistors in similar classes. Its moderate power dissipation and reliable gain stability allow for efficient circuit design with fewer compensations for temperature or load variations. The device??s transition frequency supports medium-speed switching, making it versatile for both analog and digital circuits. These attributes translate into improved sensitivity and accuracy in signal processing applications, while maintaining robust reliability under industrial conditions.
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Typical Applications
- General-purpose amplification: Ideal for audio preamplifiers and signal conditioning circuits where moderate gain and low distortion are required.
- Switching applications: Suitable for driving relays, lamps, and low-power motors in control systems.
- Industrial control circuits: Used in sensor interfaces and actuator drivers requiring dependable transistor performance.
- Consumer electronics: Integrates well into devices such as radios, timers, and small power supply units.
2N3636UB/TR Brand Info
The 2N3636UB/TR is produced by a reputable semiconductor manufacturer known for delivering consistent quality and reliability in bipolar junction transistors. This device is part of a widely utilized transistor family designed to meet the stringent requirements of industrial and commercial electronics. Manufactured with controlled processes and subjected to rigorous testing, it ensures dependable operation across a broad range of applications. The ??UB/TR?? suffix indicates a specific packaging and tape-and-reel option, facilitating automated assembly and efficient inventory management for volume production.
FAQ
What is the maximum collector current supported by this transistor?
The maximum collector current for this device is 1 ampere. This current rating makes it suitable for moderate power switching and amplification without compromising device longevity or performance.
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Can this transistor be used in high-frequency applications?
With a transition frequency around 40 MHz, this transistor is well-suited for medium-frequency amplification and switching tasks, but it is not intended for very high-frequency RF applications where GHz-range components are required.
What are the typical voltage limits for safe operation?
The transistor supports a maximum collector-emitter voltage of 30 volts and a collector-base voltage of 40 volts. Staying within these limits ensures reliable performance and prevents breakdown under normal operating conditions.
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Is this device suitable for automated PCB assembly?
Yes, the ??UB/TR?? suffix denotes tape-and-reel packaging, which is compatible with automated pick-and-place machinery used in surface mount technology and high-volume production environments.
What temperature range can this transistor operate within?
The device is rated for junction temperatures up to +150??C, making it appropriate for use in industrial settings where elevated temperatures are common. Proper thermal management should be implemented to maintain safe operating conditions.
