JAN2N2907AUBP/TR NPN Transistor by ON Semiconductor, TO-252 Package, High Gain

  • This transistor controls current flow efficiently, enabling reliable signal amplification in circuits.
  • Featuring a high voltage rating, it supports stable operation under demanding electrical conditions.
  • The compact package reduces board space, allowing for streamlined circuit designs.
  • Ideal for switching tasks in power management systems, it enhances overall device performance.
  • Manufactured to meet standard quality protocols, ensuring consistent reliability in various environments.
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JAN2N2907AUBP/TR Overview

The JAN2N2907AUBP/TR is a high-performance PNP bipolar junction transistor designed for industrial and military applications requiring robust switching and amplification capabilities. Featuring a complementary design commonly used with its NPN counterpart, this transistor delivers reliable operation at collector currents up to 600mA and voltages up to 60V. Its JAN (Joint Army-Navy) qualification ensures enhanced ruggedness, making it suitable for demanding environments where stability and durability are critical. Engineers and sourcing specialists benefit from its standardized TO-252 surface-mount package, enabling efficient PCB integration and thermal management. For precise, dependable transistor solutions, explore more at IC Manufacturer.

JAN2N2907AUBP/TR Key Features

  • High collector current handling: Supports continuous currents up to 600mA, enabling effective power switching in moderate load applications.
  • Wide voltage rating: Collector-emitter voltage up to 60V ensures versatility across various industrial voltage domains.
  • JAN military-grade qualification: Guarantees enhanced reliability and ruggedness under harsh environmental and operational conditions.
  • Complementary transistor design: Optimized for use alongside NPN types such as the 2N2222A, simplifying push-pull amplifier and switching circuit designs.
  • Surface-mount TO-252 package: Facilitates compact PCB layouts with improved heat dissipation compared to traditional through-hole alternatives.
  • Low saturation voltage: Ensures efficient switching with minimized power loss, improving overall circuit performance.
  • Stable gain characteristics: Enhances signal amplification accuracy and consistency in analog and digital applications.

JAN2N2907AUBP/TR Technical Specifications

Parameter Specification
Device Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector Current (IC) 600 mA continuous
Power Dissipation (Ptot) 625 mW (surface mount)
Gain Bandwidth Product (fT) 100 MHz (typical)
DC Current Gain (hFE) 100 to 300 (varies by operating point)
Package Type TO-252 (surface mount)
Operating Temperature Range -55??C to +150??C
Transition Frequency Up to 100 MHz

JAN2N2907AUBP/TR Advantages vs Typical Alternatives

This transistor offers superior reliability due to its JAN military-grade certification, which is uncommon in many commercial counterparts. Its TO-252 package improves thermal management and allows for more compact designs compared to traditional TO-18 or TO-92 packages. The combination of a robust voltage rating and high current capability ensures it performs well under demanding electrical stresses. Additionally, the low saturation voltage and stable gain make it an efficient choice for power-sensitive switching and amplification tasks, providing engineers with a dependable and flexible component.

Typical Applications

  • Power switching in industrial control circuits where moderate current handling and voltage tolerance are required, ensuring reliable on/off control of loads.
  • Signal amplification in audio and analog signal processing circuits, benefiting from its stable gain and frequency response.
  • Complementary push-pull amplifier stages paired with NPN transistors for balanced and efficient amplification designs.
  • Military and aerospace electronics requiring rugged, temperature-resilient components for harsh environment operation.

JAN2N2907AUBP/TR Brand Info

The JAN2N2907AUBP/TR is part of a trusted line of military-grade transistors known for their stringent quality and reliability standards. This product is manufactured under the JAN (Joint Army-Navy) certification program, ensuring it meets rigorous testing for performance under extreme conditions. The surface-mount package format reflects modern assembly requirements, offering designers a reliable and compact transistor solution without compromising on electrical characteristics or robustness. This device aligns with industry standards for professional-grade semiconductor components used in critical applications.

FAQ

What is the maximum collector current rating for this transistor?

The transistor can handle a continuous collector current of up to 600mA, making it suitable for moderate power switching and amplification tasks in various industrial applications.

What package type does this transistor use, and why is it beneficial?

It uses a TO-252 surface-mount package, which allows for efficient PCB space utilization and improved heat dissipation compared to traditional through-hole packages, enhancing reliability under thermal stress.

What does the JAN designation signify for this transistor?

JAN stands for Joint Army-Navy, indicating that the transistor meets military-grade standards for quality, reliability, and environmental robustness, making it suitable for demanding defense and aerospace applications.

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Can this transistor be used in high-frequency applications?

Yes, it features a typical transition frequency (fT) of up to 100 MHz, which supports moderate high-frequency amplification and switching operations within industrial and communication circuits.

Is this transistor compatible with complementary NPN devices for push-pull configurations?

Yes, it is designed as a PNP complement to common NPN transistors like the 2N2222A, enabling balanced push-pull amplifier stages and efficient switching circuits in analog and power designs.

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