JANTX2N3700UB/TR NPN Transistor by JAN – High Power TO-66 Package

  • Acts as a high-voltage transistor enabling efficient switching and amplification in electronic circuits.
  • Features a voltage rating suitable for handling demanding electrical loads safely and effectively.
  • Designed with a package offering a compact footprint, optimizing board space in dense assemblies.
  • Ideal for power regulation tasks in industrial or consumer devices, improving overall system stability.
  • Manufactured to meet stringent quality standards, ensuring consistent performance under various conditions.
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JANTX2N3700UB/TR Overview

The JANTX2N3700UB/TR is a rugged, high-performance bipolar junction transistor (BJT) designed for military and aerospace applications requiring stringent reliability. This transistor features a high voltage rating and enhanced surge current capability, suitable for use in demanding environments. Its hermetically sealed TO-18 metal can package ensures long-term stability and resistance to harsh conditions. The device??s robust electrical characteristics make it an ideal choice for power amplification, switching, and general-purpose amplification in critical industrial systems. For detailed technical support and sourcing, visit IC Manufacturer.

JANTX2N3700UB/TR Key Features

  • High Voltage Capability: Rated for a collector-emitter voltage up to 100V, enabling operation in high-voltage circuits with confidence.
  • Enhanced Surge Current: Supports a peak collector current of up to 3A, allowing it to handle transient loads without damage.
  • Hermetically Sealed TO-18 Package: Provides superior environmental protection and long-term reliability in rugged industrial or military environments.
  • Low Noise Figure: Ensures clean signal amplification, critical for sensitive communication and instrumentation applications.
  • High Gain Bandwidth Product: Supports efficient switching and amplification at higher frequencies up to 50 MHz.
  • Stable DC Current Gain: Offers a gain (hFE) typically ranging from 40 to 300, assuring consistent performance across operating conditions.
  • Wide Operating Temperature Range: Suitable for harsh temperature environments from -65??C to +200??C, meeting military-grade requirements.

JANTX2N3700UB/TR Technical Specifications

ParameterValueUnits
Collector-Emitter Voltage (VCEO)100V
Collector-Base Voltage (VCBO)100V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC) – Continuous1A
Collector Current (IC) – Peak3A
Power Dissipation (Pc)625mW
Transition Frequency (fT)50MHz
DC Current Gain (hFE)40?C300?C
Operating Temperature Range-65 to +200??C
PackageHermetically Sealed TO-18?C

JANTX2N3700UB/TR Advantages vs Typical Alternatives

This transistor offers superior voltage handling and surge current capabilities compared to many standard BJTs, making it ideal for high-reliability applications. The hermetic TO-18 package enhances environmental resistance and long-term stability, outperforming plastic-encapsulated alternatives. Its wide temperature range and consistent gain provide dependable performance in aerospace and military systems where failure is not an option. These factors combine to deliver enhanced robustness, sensitivity, and operational accuracy in critical industrial electronics.

Typical Applications

  • Power amplification in military radio frequency (RF) transmitters where reliability under extreme conditions is critical.
  • Switching and amplification stages in aerospace avionics requiring high voltage and temperature tolerance.
  • Instrumentation amplifiers in industrial control systems demanding low noise and stable current gain.
  • General-purpose amplification in harsh environment electronics such as radar and communications equipment.

JANTX2N3700UB/TR Brand Info

The JANTX2N3700UB/TR is a military-grade transistor produced under stringent quality standards to meet defense and aerospace requirements. This product line emphasizes hermetic sealing and robust electrical performance, ensuring dependable operation in extreme conditions. Manufactured to comply with JANTX (Joint Army-Navy Transistor) specifications, the device is trusted for mission-critical applications demanding maximum reliability and precision. It is supported by comprehensive data and testing to assure conformance with industry and military standards.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage (VCEO) rating is 100 volts, allowing the device to operate safely in circuits with relatively high voltage levels without risking breakdown or damage.

How does the hermetic TO-18 package benefit the transistor??s performance?

The hermetically sealed TO-18 metal can package protects the transistor from moisture, dust, and mechanical stress. This ensures long-term stability and reliability, especially in harsh environments like aerospace or military applications.

What is the typical gain range of the transistor and why is it important?

The DC current gain (hFE) ranges from 40 to 300, providing flexibility in amplification applications. Stable gain is essential for predictable circuit behavior, particularly in sensitive analog and RF circuits.

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Can this device operate in extreme temperatures?

Yes, the transistor is rated for an operating temperature range from -65??C to +200??C. This makes it suitable for extreme industrial and military environments where temperature fluctuations are common.

What are the peak and continuous collector current ratings?

The continuous collector current rating is 1 ampere, while the transistor can handle peak collector currents up to 3 amperes during transient conditions, supporting robust switching and amplification tasks.

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