JAN2N2906AUBC/TR PNP Transistor – NXP Semiconductor – TO-251 Package

  • This device provides efficient switching capabilities to control current flow in electronic circuits effectively.
  • JAN2N2906AUBC/TR features a robust gain characteristic, ensuring stable operation under various load conditions.
  • Its compact TO-92 package reduces board space, facilitating integration into tight electronic assemblies.
  • Ideal for amplifier and signal processing applications where precise current regulation improves overall performance.
  • Manufactured under strict quality controls, it ensures consistent reliability across diverse operating environments.
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JAN2N2906AUBC/TR Overview

The JAN2N2906AUBC/TR is a high-performance PNP bipolar junction transistor designed for industrial and military-grade applications. It offers robust switching and amplification capabilities, with a focus on reliable operation under demanding conditions. This transistor features a complementary NPN counterpart, enabling versatile circuit design. Packaged in a standard TO-92 housing, it supports ease of integration and thermal management. The device is suitable for use in signal processing, amplification, and general-purpose switching tasks, ensuring dependable performance in various electronic systems. For detailed specifications and procurement, visit IC Manufacturer.

JAN2N2906AUBC/TR Key Features

  • High Current Gain (hFE): Enables efficient amplification, improving signal integrity in analog circuits.
  • Complementary Pair Design: Matches with NPN transistors like 2N2222A for push-pull and other balanced configurations.
  • Military-Grade JAN Specification: Ensures rigorous quality and reliability standards for critical applications.
  • Wide Operating Voltage Range: Supports up to 40 V collector-emitter voltage, allowing use in diverse power environments.

JAN2N2906AUBC/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 100?C300 (typical range)
Power Dissipation (Ptot) 625 mW
Operating Temperature Range -55 to +150 ??C

JAN2N2906AUBC/TR Advantages vs Typical Alternatives

This PNP transistor stands out with its military-grade JAN certification, guaranteeing superior reliability and performance under extreme conditions compared to standard commercial alternatives. Its wide voltage and temperature ratings provide enhanced durability, while the high current gain ensures efficient amplification. The device??s compatibility with complementary NPN transistors facilitates flexible circuit design, making it ideal for applications requiring stable, low-noise switching and signal processing.

Typical Applications

  • Signal Amplification: Used in analog audio and RF circuits requiring stable gain and low distortion across temperature variations.
  • Switching Circuits: Suitable for low to medium power switching in industrial control systems and embedded devices.
  • Complementary Push-Pull Amplifiers: Ideal for use in complementary transistor pairs for efficient amplifier stages.
  • General-Purpose Amplification: Reliable choice for buffer stages, driver circuits, and other analog electronics.

JAN2N2906AUBC/TR Brand Info

The JAN2N2906AUBC/TR transistor is produced under strict military standards, ensuring compliance with JAN (Joint Army-Navy) requirements for ruggedness and reliability. This product line is designed to meet the exacting demands of aerospace, defense, and high-reliability industrial applications. The device??s TO-92 package facilitates easy handling and circuit integration, while the manufacturer??s commitment to quality supports long-term availability and consistent performance for engineers and sourcing specialists.

FAQ

What does the JAN prefix signify in this transistor model?

The JAN prefix indicates that the transistor meets the Joint Army-Navy military specifications. This certification ensures the device has undergone stringent testing for temperature range, reliability, and performance, making it suitable for mission-critical applications.

Can this transistor be used in high-frequency applications?

Yes, with a gain bandwidth product (fT) around 100 MHz, this transistor supports moderate high-frequency operation. It is suitable for RF signal amplification and switching tasks within its specified frequency range.

What is the maximum collector current this transistor can handle?

The device supports a continuous collector current of up to 600 mA, making it appropriate for a range of low to medium power amplification and switching applications.

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Is the JAN2N2906AUBC/TR suitable for operation at elevated temperatures?

Yes, the transistor is rated for an operating temperature range from -55??C to +150??C, supporting use in environments with wide thermal variations without compromising performance or reliability.

What package type does this transistor come in, and how does it affect thermal management?

The transistor is housed in a TO-92 package, which offers a compact form factor with moderate thermal dissipation capabilities. While suitable for many applications, additional heat sinking may be required in high power scenarios to maintain safe operating temperatures.

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