JAN2N2906AUB/TR NPN Transistor by ON Semiconductor ?C TO-251 Package, High Gain

  • This device performs efficient switching to enhance circuit control and overall power management.
  • The transistor supports specified voltage limits, ensuring safe operation under typical electrical conditions.
  • Its compact package enables board-space savings, ideal for dense electronic assemblies.
  • JAN2N2906AUB/TR suits power regulation in consumer electronics, improving device stability and performance.
  • Manufactured under rigorous quality standards, it offers consistent reliability in various environments.
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产品上方询盘

JAN2N2906AUB/TR Overview

The JAN2N2906AUB/TR is a high-performance PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Optimized for industrial and military standards, this transistor delivers robust electrical characteristics with a maximum collector current of 600mA and a collector-emitter voltage rating of 40V. It is housed in the compact TO-18 package, ensuring reliable thermal performance and ease of integration in space-constrained environments. Available in tape and reel packaging, the device facilitates automated assembly processes. For sourcing and detailed technical information, visit IC Manufacturer.

JAN2N2906AUB/TR Key Features

  • High Collector Current Capability: Supports up to 600mA continuous current, enabling efficient switching and amplification in demanding circuits.
  • Voltage Handling: Collector-emitter voltage rating of 40V provides reliable operation in medium voltage applications.
  • Low Collector-Emitter Saturation Voltage: Reduces power dissipation and improves overall circuit efficiency.
  • Military-Grade Qualification: Meets JAN (Joint Army-Navy) standards, ensuring enhanced reliability and consistency for defense and aerospace applications.
  • Compact TO-18 Package: Facilitates thermal management and space-saving PCB layouts without compromising performance.
  • Standard Gain Characteristics: Offers a DC current gain (hFE) range suitable for a wide variety of analog and digital circuit designs.
  • Tape and Reel Packaging: Supports high-volume automated manufacturing and reduces handling damage during assembly.

JAN2N2906AUB/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 40?C300 ??
Transition Frequency (fT) 100 MHz
Package Type TO-18 ??

JAN2N2906AUB/TR Advantages vs Typical Alternatives

This transistor stands out for its military-grade qualification under JAN standards, ensuring superior reliability and thermal stability compared to commercial-grade equivalents. Its high collector current rating and low saturation voltage enable efficient switching with minimal power loss. The compact TO-18 package supports enhanced heat dissipation and simplifies integration in compact PCB designs. Tape and reel packaging further streamlines high-volume production, offering clear advantages in manufacturing and quality control.

Typical Applications

  • Switching circuits in industrial control systems where reliable PNP transistor operation is critical for longevity and performance.
  • General-purpose amplification in analog signal processing for instrumentation and measurement devices.
  • Military and aerospace electronic assemblies requiring rugged components with strict quality standards.
  • Automated manufacturing environments benefiting from tape and reel packaging for efficient assembly line integration.

JAN2N2906AUB/TR Brand Info

The JAN2N2906AUB/TR is a JAN-qualified transistor, a designation indicating compliance with stringent Joint Army-Navy military standards. These standards guarantee reliability under harsh environmental conditions, making this device suitable for defense and aerospace applications. Manufactured with precision processes, this product adheres to rigorous quality benchmarks, ensuring consistent electrical performance and durability for mission-critical systems.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this device is 600mA. This allows it to handle moderate power loads in switching and amplification circuits without degradation or failure.

Which package type does this transistor come in?

This transistor is housed in a TO-18 metal can package, which helps in efficient heat dissipation and is suitable for compact circuit board designs.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100 MHz, it performs adequately in high-frequency signal amplification and switching tasks within its specified operating limits.

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产品中间询盘

What does the JAN qualification signify for this transistor?

JAN qualification indicates that the transistor meets military-grade standards for quality and reliability, ensuring robust performance in harsh environments typical of defense and aerospace applications.

How is the product packaged for manufacturing use?

The device is supplied in tape and reel packaging, which is optimized for automated pick-and-place assembly processes, reducing handling damage and improving production efficiency.

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