JAN2N2221AUB/TR NPN Transistor by JAN – High Gain, TO-18 Metal Can Package

  • This component efficiently switches electrical signals, enabling precise control in various circuits.
  • It supports a voltage rating suitable for managing moderate power levels, ensuring stable performance.
  • Featuring a compact package, it reduces board space and allows for denser circuit designs.
  • Ideal for use in power regulation modules, it enhances energy efficiency and operational stability.
  • JAN2N2221AUB/TR is manufactured to meet strict quality standards, promoting long-term reliability.
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JAN2N2221AUB/TR Overview

The JAN2N2221AUB/TR is a high-performance NPN bipolar junction transistor optimized for switching and amplification applications. Engineered for military and industrial-grade environments, this transistor delivers dependable operation with a collector current rating up to 800 mA and a voltage rating suitable for a variety of electronic designs. Its robust packaging and stringent manufacturing standards ensure enhanced reliability and consistent performance. Ideal for engineers and sourcing specialists requiring a durable, efficient transistor for signal amplification and switching tasks, the device supports critical applications where quality and longevity are essential. More details available at IC Manufacturer.

JAN2N2221AUB/TR Key Features

  • High Collector Current Capability: Supports up to 800 mA, enabling efficient switching and amplification in demanding circuits.
  • Voltage Endurance: Collector-Emitter voltage rating of 40 V ensures robust operation under varying supply conditions.
  • Military-Grade Reliability: Constructed under rigorous standards to provide enhanced thermal stability and long-term durability.
  • TO-18 Package: Compact hermetic metal can packaging offers excellent thermal conduction and mechanical protection.

JAN2N2221AUB/TR Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Maximum Collector-Emitter Voltage (Vceo) 40 V
Maximum Collector Current (Ic) 800 mA
Transition Frequency (fT) 300 MHz (typical)
Power Dissipation (Pd) 625 mW (at 25??C)
Gain Bandwidth Product 300 MHz (typical)
Package Type TO-18 Metal Can
Operating Temperature Range -55??C to +125??C
Current Gain (hFE) 100 to 300 (at Ic = 150 mA)

JAN2N2221AUB/TR Advantages vs Typical Alternatives

This transistor provides superior reliability and thermal performance compared to common plastic-encapsulated alternatives. Its military-grade certification and hermetic TO-18 package enhance long-term stability under harsh environmental conditions. The higher current capacity and voltage ratings deliver greater design flexibility, while the consistent gain bandwidth ensures precise signal amplification, making it advantageous for critical industrial or defense applications.

Typical Applications

  • Signal amplification in communication and control circuits requiring stable gain and high-frequency response under demanding conditions.
  • Switching applications in industrial automation systems where ruggedness and reliability are paramount.
  • Military and aerospace electronics benefiting from hermetic packaging and extended temperature tolerance.
  • General-purpose transistor replacement in legacy systems demanding proven performance and consistent electrical characteristics.

JAN2N2221AUB/TR Brand Info

The JAN2N2221AUB/TR is produced under the JAN (Joint Army-Navy) standard, reflecting stringent military quality requirements. This designation ensures the transistor meets rigorous testing and manufacturing criteria, including hermetic sealing and enhanced performance parameters. The product is widely recognized in aerospace, defense, and industrial sectors for its consistent reliability and durability in challenging operating environments.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum collector current of 800 mA, allowing it to handle moderate power switching and amplification tasks effectively in various circuit designs.

What package type is used for the JAN2N2221AUB/TR, and why is it important?

The device is housed in a TO-18 metal can package, providing excellent thermal conductivity and hermetic sealing that protects against moisture and mechanical stress, which is crucial for reliability in harsh environments.

Can this transistor operate in extreme temperature conditions?

Yes, it is designed to operate across a broad temperature range from -55??C to +125??C, making it suitable for military and industrial applications exposed to extreme temperature variations.

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产品中间询盘

What are the typical applications for this transistor?

This transistor is commonly used in signal amplification, switching circuits in industrial automation, military electronics, aerospace systems, and as a reliable replacement in legacy designs requiring consistent electrical performance.

How does the gain bandwidth product impact its performance?

The gain bandwidth product of approximately 300 MHz ensures the transistor can amplify high-frequency signals effectively, which is essential in RF and fast switching applications where signal integrity is critical.

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