JAN2N2907AUB/TR NPN Transistor by ON Semiconductor, TO-252 Package – High Performance

  • This device functions as a transistor, enabling efficient current amplification for diverse electronic circuits.
  • JAN2N2907AUB/TR offers robust voltage handling, ensuring stable operation in moderate power applications.
  • Its standard package supports ease of integration while maintaining a compact footprint on circuit boards.
  • Ideal for switching and amplification tasks in automotive or industrial control systems requiring dependable performance.
  • Manufactured under stringent quality controls to provide consistent reliability across various operating conditions.
Microchip Technology-logo
产品上方询盘

JAN2N2907AUB/TR Overview

The JAN2N2907AUB/TR is a high-performance PNP bipolar junction transistor designed for switching and amplification in industrial and commercial electronics. Featuring a robust voltage rating and dependable current handling capabilities, this transistor ensures reliable operation in demanding environments. Its complementary design and standardized JEDEC JAN military specifications make it ideal for applications requiring consistent performance and quality assurance. Sourced from a trusted IC Manufacturer, it is optimized for integration into discrete and analog circuits, delivering stable switching characteristics and efficient power management.

JAN2N2907AUB/TR Key Features

  • High Voltage Tolerance: Supports collector-emitter voltages up to 60V, enabling use in a wide range of voltage domains.
  • Reliable Current Handling: Can handle continuous collector current up to 600mA, supporting moderate power applications effectively.
  • Military-Grade Quality: Meets JAN (Joint Army-Navy) specifications, ensuring enhanced robustness for mission-critical and industrial systems.
  • Low Saturation Voltage: Ensures efficient switching performance, reducing power losses and improving overall circuit efficiency.

JAN2N2907AUB/TR Technical Specifications

Parameter Value
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (PD) 800 mW
DC Current Gain (hFE) 100 to 300
Transition Frequency (fT) 200 MHz (typical)
Package Type TO-92

JAN2N2907AUB/TR Advantages vs Typical Alternatives

This transistor offers a reliable balance of voltage and current ratings, making it favorable compared to typical alternatives that may compromise on either parameter. Its JAN military-grade certification guarantees enhanced durability and consistent performance under stress, which is critical for industrial and defense-related applications. The low saturation voltage improves efficiency compared to generic PNP transistors, while the standardized TO-92 package ensures straightforward integration in compact designs.

Typical Applications

  • Switching circuits in industrial control systems, where stable operation and medium power handling are essential for reliable device control and signal amplification.
  • General-purpose amplification in low to medium frequency analog circuits requiring dependable gain and low noise.
  • Signal processing in communication equipment where precise transistor characteristics ensure signal integrity.
  • Embedded systems and power management circuits demanding efficient switching and thermal stability in a compact form factor.

JAN2N2907AUB/TR Brand Info

The JAN2N2907AUB/TR is produced under strict quality control standards aligned with military (JAN) specifications, ensuring premium reliability and performance consistency. This transistor is part of a reputable line of bipolar junction transistors manufactured for industrial and defense markets. Its adherence to JEDEC standards reflects the brand??s commitment to delivering components that meet rigorous electrical and environmental criteria, supporting long-term operational stability in demanding applications.

FAQ

What are the key electrical ratings for this PNP transistor?

The transistor is rated for a collector-emitter voltage of 60V and a continuous collector current of 600mA. It also supports a power dissipation of up to 800mW, making it suitable for medium power applications requiring reliable switching and amplification.

How does the JAN military specification affect this transistor’s reliability?

Meeting the JAN standard means the device undergoes stringent testing for temperature extremes, vibration, and electrical parameters. This ensures superior reliability and durability compared to commercial-grade transistors, making it suitable for critical military and industrial environments.

What package type is used for this transistor, and why is it important?

This transistor uses the TO-92 package, a widely adopted through-hole format that simplifies prototyping and integration into various circuit boards. Its small size and standardized pinout facilitate easy replacement and compatibility with existing designs.

📩 Contact Us

产品中间询盘

Can this transistor be used in high-frequency applications?

With a typical transition frequency (fT) of 200 MHz, the device is capable of handling moderate high-frequency signals, making it suitable for many signal processing and amplification tasks, although not intended for very high-frequency RF applications.

What are common use cases where this transistor excels?

It excels in switching and amplification for industrial controls, embedded systems, and communication equipment. Its balanced electrical characteristics and military-grade reliability also make it ideal for applications requiring consistent performance under harsh conditions.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?