JANTX2N2222AUB/TR NPN Transistor by JANTX – TO-18 Metal Can Package

JANTX2N2222AUB/TR Overview

The JANTX2N2222AUB/TR is a high-reliability, military-grade NPN bipolar junction transistor designed for switching and amplification applications. It features a robust planar epitaxial silicon structure optimized for precise current gain and high voltage operation. With a collector-emitter voltage rating of 40 V and a collector current capability of up to 800 mA, this transistor excels in demanding industrial and aerospace environments where dependable performance under harsh conditions is critical. The device comes in a TO-18 metal can package, ensuring excellent thermal conductivity and mechanical durability. Ideal for engineers and sourcing specialists requiring consistent quality, this transistor offers a trusted solution backed by IC Manufacturer.

JANTX2N2222AUB/TR Key Features

• High collector current capability: Supports up to 800 mA, enabling reliable switching and amplification in medium-power circuits.
• Robust voltage tolerance: Collector-emitter voltage rated at 40 V, suitable for a wide range of signal and power applications.
• Military-grade reliability: Built to stringent quality standards, ensuring consistent operation in harsh environmental and temperature conditions.
• Metal TO-18 package: Provides superior heat dissipation and mechanical strength, enhancing device longevity in industrial setups.

JANTX2N2222AUB/TR Technical Specifications

JANTX2N2222AUB/TR Advantages vs Typical Alternatives

This transistor offers enhanced reliability and rugged construction compared to standard commercial-grade alternatives. Its superior power dissipation and wider operating temperature range ensure stable performance in industrial and aerospace applications. The metal TO-18 package improves thermal management, reducing thermal stress during high-frequency switching. Additionally, the device’s consistent gain and voltage ratings provide precision and durability, making it a preferred choice for mission-critical environments.

Typical Applications

• Signal amplification and switching in aerospace and military-grade electronic systems, where reliability and environmental tolerance are paramount.
• General-purpose switching in industrial control circuits requiring robustness and stable high-frequency response.
• Low-power driver stages for relay and indicator circuits, benefiting from the transistor??s high gain and current capabilities.
• Temperature-sensitive instrumentation where wide temperature operation and predictable performance are essential.

JANTX2N2222AUB/TR Brand Info

The JANTX2N2222AUB/TR is a military-specification variant of the classic 2N2222 transistor, manufactured under strict quality controls to meet defense and aerospace standards. The brand emphasizes durability, thermal robustness, and consistent electrical characteristics, making this transistor suitable for critical applications requiring dependable semiconductor components. Its legacy and proven performance have established it as a trusted choice among engineers and sourcing professionals in demanding industries.

FAQ

What is the maximum collector current rating of this transistor?

The transistor can handle a maximum collector current of 800 mA continuously, which allows it to manage moderate power levels in switching and amplification circuits without degradation.

What package type does this device use, and why is it important?

This transistor is housed in a TO-18 metal can package, which offers excellent thermal conductivity and mechanical protection. This packaging helps maintain device reliability under thermal stress and harsh environmental conditions.

Can this transistor operate in extreme temperature conditions?

Yes, it is designed to operate reliably over a temperature range from -55??C to +200??C, making it suitable for military and aerospace applications where temperature extremes are common.

What is the typical current gain (hFE) range for this transistor?

The DC current gain ranges from 100 to 300 depending on the collector current and operating conditions, providing good amplification characteristics for various circuit designs.

Is this transistor suitable for high-frequency applications?

With a transition frequency (fT) of 250 MHz, this transistor supports moderate high-frequency operations, making it practical for signal amplification and switching in RF and high-speed circuits.