JANTX2N2907AUB/TR PNP Transistor by ON Semiconductor – TO-39 Metal Can Package

  • This transistor provides efficient switching and amplification, enhancing circuit performance and control.
  • Featuring a robust current rating, it supports stable operation under demanding electrical loads.
  • The compact package design enables board-space savings, making it suitable for dense circuit layouts.
  • Ideal for use in power regulation circuits, it helps maintain consistent voltage and protect components.
  • Manufactured to meet stringent quality standards, ensuring reliable operation over extended periods.
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JANTX2N2907AUB/TR Overview

The JANTX2N2907AUB/TR is a high-performance PNP bipolar junction transistor designed for robust switching and amplification in military and industrial applications. Featuring a collector current capacity of up to 600 mA and a collector-emitter voltage rating of 60 V, this transistor delivers reliable operation under demanding conditions. Its plastic TO-18 metal can package ensures enhanced thermal dissipation and mechanical durability. Ideal for circuits requiring stable gain and high reliability, it is a trusted choice for engineers sourcing components with stringent quality and performance criteria. For detailed sourcing, visit IC Manufacturer.

JANTX2N2907AUB/TR Key Features

  • High Current Handling: Supports collector current up to 600 mA, enabling effective control of moderate power loads without compromising device integrity.
  • Robust Voltage Rating: Rated for collector-emitter voltage up to 60 V, suitable for a wide range of medium-voltage applications.
  • TO-18 Metal Can Package: Provides excellent thermal conductivity and mechanical strength, enhancing device reliability in harsh environments.
  • Stable DC Current Gain: Maintains a gain (hFE) between 40 and 100, ensuring predictable amplification performance.

JANTX2N2907AUB/TR Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)60V
Collector-Base Voltage (VCBO)60V
Emitter-Base Voltage (VEBO)5V
Continuous Collector Current (IC)600mA
DC Current Gain (hFE)40 to 100?C
Power Dissipation (Ptot)800mW
Transition Frequency (fT)100MHz
Package TypeTO-18 (metal can)?C

JANTX2N2907AUB/TR Advantages vs Typical Alternatives

This transistor stands out due to its military-grade certification and enhanced reliability, making it superior for applications requiring long-term stability. Compared to typical commercial-grade PNP transistors, it offers improved thermal management via its metal can package and consistent gain performance. This ensures better switching accuracy and reliability under harsh operating conditions, providing engineers with a component that balances power, sensitivity, and durability.

Typical Applications

  • Signal amplification and switching in military communication equipment, where high reliability and stable gain are critical for mission success.
  • Power control circuits in industrial automation systems, benefiting from the transistor??s robust voltage and current ratings.
  • Driver stages in audio amplification, leveraging consistent current gain for clear signal reproduction.
  • General-purpose low to medium power switching applications requiring a dependable PNP transistor with proven longevity.

JANTX2N2907AUB/TR Brand Info

The JANTX2N2907AUB/TR is part of the JAN (Joint Army-Navy) series, representing a military-standard transistor line known for stringent quality and reliability testing. This product is manufactured to meet MIL-PRF-19500 specifications, ensuring superior ruggedness and stable operation in extreme environments. Its heritage within this brand assures engineers and sourcing specialists of consistent performance aligned with defense and aerospace industry requirements.

FAQ

What is the maximum collector current supported by this transistor?

The device supports a continuous collector current up to 600 mA, making it suitable for moderate power switching and amplification tasks without risk of damage under rated conditions.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency of approximately 100 MHz, it is capable of functioning effectively in moderate high-frequency circuits, including RF and communication devices.

What packaging does the transistor use and why is it important?

This transistor is housed in a TO-18 metal can package, offering superior thermal dissipation and mechanical strength compared to standard plastic packages. This enhances reliability, especially in harsh or high-temperature environments.

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Is this transistor suitable for military-grade applications?

Yes, it is manufactured according to MIL-PRF-19500 standards, ensuring it meets rigorous military specifications for performance, reliability, and durability in demanding applications.

What is the range of DC current gain for this transistor?

The DC current gain (hFE) typically ranges between 40 and 100, providing predictable amplification that engineers can rely on for precise circuit design and stable operation.

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