DTA114ESA-AP Toshiba NPN Transistor, High-Speed Switching, SMD Package

DTA114ESA-AP Overview

The DTA114ESA-AP is a high-performance silicon NPN transistor designed for general-purpose amplification and switching applications. Featuring a robust gain bandwidth and low saturation voltage, it offers reliable operation in medium power circuits. Its compact SOT-23 package ensures easy integration into space-constrained industrial designs. The device??s well-balanced electrical characteristics make it suitable for signal amplification, driver stages, and switching tasks in various electronic systems. Trusted by engineers for consistent performance, the DTA114ESA-AP is a versatile choice for demanding semiconductor applications. For detailed technical data, visit IC Manufacturer.

DTA114ESA-AP Technical Specifications

DTA114ESA-AP Key Features

• High Gain Bandwidth: Supports frequencies up to 100 MHz, enabling efficient high-speed switching and amplification.
• Low Collector-Emitter Saturation Voltage: Minimizes power loss during switching, improving overall circuit efficiency and thermal performance.
• Compact SOT-23 Package: Facilitates easy integration into compact PCB layouts while maintaining robust mechanical stability.
• Wide Voltage Ratings: Collector-Emitter voltage of 50 V and Collector-Base voltage of 60 V accommodate a variety of industrial voltage levels.

Typical Applications

• Signal amplification in low to medium power analog circuits, ideal for pre-amplifier and driver stages in industrial control systems.
• Switching element in DC-DC converters and power management modules where fast response and low saturation voltage are critical.
• Interface transistor for logic-level signals requiring reliable switching in embedded system designs and communication equipment.
• General-purpose switching in automotive electronics and instrumentation, benefiting from its wide voltage ratings and robustness.

DTA114ESA-AP Advantages vs Typical Alternatives

This transistor delivers a balanced combination of voltage handling, gain, and switching speed that surpasses many general-purpose alternatives. Its low saturation voltage reduces power dissipation, enhancing efficiency in switching applications. The compact SOT-23 form factor allows for dense PCB designs without compromising reliability. Such integration benefits sourcing specialists seeking cost-effective components with reliable performance across diverse industrial environments.

DTA114ESA-AP Brand Info

The DTA114ESA-AP is manufactured by Diodes Incorporated, a global leader in discrete semiconductor products. Diodes Incorporated specializes in delivering high-quality transistor solutions designed for industrial, consumer, and automotive applications. This device is part of their extensive portfolio of silicon transistors known for their robustness, consistency, and adherence to stringent quality standards. The brand??s commitment to innovation and reliable supply chains makes this transistor a preferred choice among engineers and procurement teams worldwide.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current is rated at 200 mA, making it suitable for low to medium power amplification and switching applications without thermal overstress.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency (f_T) of 100 MHz, it supports high-speed switching and amplification, making it well-suited for RF and fast digital signal circuits.

What package type does this transistor come in?

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