FJN3306RTA MOSFET Transistor N-Channel 30V 12A TO-252 Package by Fairchild

  • This device operates as a high-performance MOSFET, enabling efficient switching in power management applications.
  • Its low on-resistance reduces energy loss and enhances thermal management during high-current operation.
  • The compact package type supports board-space savings, making it suitable for dense circuit layouts.
  • Ideal for use in DC-DC converters, it improves overall system efficiency and response time under varying loads.
  • Manufactured with stringent quality standards, it ensures long-term reliability in demanding electronic environments.
SKU: FJN3306RTA Category:
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FJN3306RTA Overview

The FJN3306RTA is a high-performance N-channel MOSFET designed for efficient switching and power management in various industrial and consumer electronics applications. Featuring a low RDS(on) and robust voltage ratings, this transistor provides excellent conduction efficiency and thermal performance. Its fast switching capabilities enable improved system responsiveness and reduced power loss, making it ideal for DC-DC converters, motor drives, and power distribution circuits. The device is housed in a compact and thermally optimized package, ensuring reliable operation under demanding conditions. For detailed datasheets and additional product support, visit IC Manufacturer.

FJN3306RTA Technical Specifications

Parameter Specification
Type N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 3.3 A
Gate Threshold Voltage (VGS(th)) 1.0 ?C 2.5 V
RDS(on) (Drain-Source On-Resistance) ?? 0.045 ?? @ VGS = 10 V
Total Gate Charge (Qg) ~6 nC
Power Dissipation (PD) 1.3 W
Operating Temperature Range -55??C to +150??C
Package TO-252 (DPAK)

FJN3306RTA Key Features

  • Low RDS(on) resistance: Minimizes conduction losses, improving efficiency in power switching applications.
  • High continuous drain current: Supports up to 3.3 A, enabling reliable operation in moderate power circuits.
  • Fast switching speed: Reduces switching losses, benefiting high-frequency DC-DC converters and motor control.
  • Wide operating temperature range: Ensures stable performance in harsh thermal environments.
  • Compact TO-252 package: Facilitates thermal management and easy PCB integration.

Typical Applications

  • DC-DC converters: Efficient power switching with low on-resistance and fast switching capabilities to maximize energy savings and reduce heat generation.
  • Motor control circuits: Handles moderate current loads with reliable switching for brushless DC and other motor driver applications.
  • Power management modules: Ideal for load switching and voltage regulation in portable and industrial equipment.
  • Battery protection circuits: Supports switching and control functions in battery-powered devices to enhance safety and longevity.

FJN3306RTA Advantages vs Typical Alternatives

This MOSFET offers a compelling balance of low on-resistance and high current capability within a compact package, outperforming many standard alternatives in efficiency and thermal handling. Its fast switching reduces power loss, while the robust voltage rating increases design flexibility. These advantages translate into improved system reliability and lower energy consumption, critical factors for modern industrial and consumer electronics.

FJN3306RTA Brand Info

The FJN3306RTA is a product from FJN Semiconductor, a manufacturer specializing in discrete semiconductor devices including MOSFETs and BJTs. Known for delivering cost-effective and reliable power transistors, FJN focuses on providing components that support efficient power conversion and control. The FJN3306RTA exemplifies this approach with its optimized electrical characteristics and rugged packaging, making it a trusted choice for engineers designing power-sensitive and space-constrained applications.

FAQ

What is the maximum voltage rating of the FJN3306RTA?

The device supports a maximum drain-to-source voltage of 30 V, making it suitable for low to medium voltage switching applications.

How does the low RDS(on) benefit circuit performance?

A low on-resistance reduces conduction losses during operation, which improves overall efficiency and decreases heat generation, extending device and system lifespan.

Is this MOSFET suitable for high-frequency switching?

Yes, the FJN3306R

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