BCR505E6778HTSA1 Overview
The BCR505E6778HTSA1 is a high-performance transistor designed for robust switching and amplification applications in industrial electronics. Engineered to deliver consistent electrical characteristics, it supports efficient power management and signal control. Its compact package and reliable thermal performance make it ideal for demanding environments. By integrating this component, engineers can enhance device durability and operational stability. For detailed specifications and sourcing options, visit IC Manufacturer.
BCR505E6778HTSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 500 mA |
| Power Dissipation (Ptot) | 625 mW |
| DC Current Gain (hFE) | 100 ?C 300 (typical) |
| Transition Frequency (fT) | 100 MHz |
| Package Type | SOT-23 Surface Mount |
| Operating Temperature Range | -55??C to +150??C |
BCR505E6778HTSA1 Key Features
- High current gain: Enables efficient signal amplification, reducing the need for additional gain stages in circuit designs.
- Low collector-emitter saturation voltage: Minimizes power loss and heat generation during switching, improving overall system efficiency.
- Compact SOT-23 package: Supports high-density PCB layouts and surface mount technology, saving board space while maintaining reliability.
- Wide operating temperature range: Ensures stable performance in harsh industrial environments and extended temperature conditions.
Typical Applications
- General purpose amplification and switching in industrial control systems, where reliable transistor performance is critical to device longevity and precision.
- Signal processing circuits requiring low noise and stable gain characteristics.
- Power management modules in consumer and industrial electronics to improve energy efficiency and reduce thermal stress.
- Embedded systems and microcontroller interface circuits for driving loads with adequate current handling capabilities.
BCR505E6778HTSA1 Advantages vs Typical Alternatives
This transistor offers superior current gain and low saturation voltage compared to typical alternatives, allowing for more efficient power use and reduced thermal dissipation. Its compact SOT-23 package supports modern surface mount assembly and high-density PCB designs. The wide temperature tolerance and consistent electrical parameters provide enhanced reliability in industrial applications where environmental conditions vary significantly.
🔥 Best-Selling Products
BCR505E6778HTSA1 Brand Info
The BCR505E6778HTSA1 is manufactured by ON Semiconductor, a global leader in energy-efficient semiconductor solutions. ON Semiconductor specializes in high-quality discrete devices, including bipolar transistors optimized for switching and amplification tasks. This product line reflects the company??s commitment to providing robust components that meet stringent industrial standards and support advanced electronics manufacturing.
FAQ
What type of transistor is the BCR505E6778HTSA1?
The device is an NPN bipolar junction transistor designed primarily for switching and amplification. It offers reliable performance in a compact SOT-23 surface mount package, making it suitable for modern PCB assembly processes.
🌟 Featured Products
-

“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-

QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-

0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-

1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
What is the maximum collector current supported?
The transistor supports a maximum collector current of 500 mA, providing sufficient drive capability for a broad range of low to medium power applications in industrial and consumer electronics.
Can this transistor operate in high-temperature environments?
Yes, it is rated for an operating temperature range from -55??C up to +150??C. This wide range ensures stable operation under harsh industrial conditions and elevated temperatures.
📩 Contact Us
What is the benefit of the low collector-emitter saturation voltage?
A low saturation voltage reduces power losses during switching, which improves device efficiency and minimizes heat generation. This characteristic helps extend the lifespan of the transistor and the overall circuit.





