BCR133E6393HTSA1 Overview
The BCR133E6393HTSA1 is a high-performance phototransistor designed for reliable optical sensing applications. Featuring a compact package and optimized spectral response, it delivers consistent sensitivity for precise light detection. Its robust construction ensures stable operation in various industrial environments, making it ideal for automated systems requiring accurate optical input. This component supports efficient integration into electronic assemblies with its standardized pin configuration and low power consumption. Engineers and sourcing specialists benefit from its proven reliability and ease of implementation. For detailed manufacturer information, visit IC Manufacturer.
BCR133E6393HTSA1 Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | 30 | V | Maximum voltage between collector and emitter |
| Emitter-Collector Voltage (VECO) | 5 | V | Maximum voltage between emitter and collector |
| Collector Current (IC) | 50 | mA | Maximum continuous collector current |
| Power Dissipation (Ptot) | 150 | mW | Maximum power dissipation |
| Response Time (tr) | 5 | ??s | Typical rise time |
| Peak Spectral Sensitivity | 900 | nm | Wavelength of maximum sensitivity |
| Dark Current (ICEO) | 50 | nA | Typical leakage current in dark conditions |
| Package Type | TO-18 | – | Metal can package for durability |
BCR133E6393HTSA1 Key Features
- High Sensitivity Phototransistor: Enables precise detection of near-infrared light, benefiting applications requiring accurate optical signal conversion.
- Fast Response Time: With a typical rise time of 5 ??s, it supports rapid switching operations, essential for high-speed signal processing.
- Robust TO-18 Metal Can Package: Provides excellent mechanical protection and thermal dissipation, ensuring reliable performance in harsh environments.
- Low Dark Current: Minimizes noise, improving signal-to-noise ratio for better measurement accuracy in low light conditions.
Typical Applications
- Optical sensor circuits in industrial automation, where reliable light detection is critical for system feedback and control.
- Remote control receivers requiring near-infrared sensitivity for accurate signal decoding.
- Light barrier and object detection systems in manufacturing lines, enhancing process safety and efficiency.
- Instrumentation and measurement devices that demand stable photodetection under varying environmental conditions.
BCR133E6393HTSA1 Advantages vs Typical Alternatives
This phototransistor offers superior sensitivity at near-infrared wavelengths compared to many generic devices. Its low dark current and fast response improve measurement accuracy and speed, which are critical in automated industrial applications. The durable TO-18 package further enhances reliability and thermal management, making it a preferred choice over plastic-encapsulated alternatives. These advantages contribute to higher integration efficiency and reduced maintenance costs within optical sensing designs.
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BCR133E6393HTSA1 Brand Info
The BCR133E6393HTSA1 is produced by a leading semiconductor manufacturer specializing in optoelectronic components. Known for high-quality phototransistor products, the brand emphasizes robust performance and consistency across industrial applications. This device reflects the brand??s commitment to delivering components that support precision sensing, durable packaging, and ease of integration in demanding environments. It is
