BCR553E6327HTSA1 Overview
The BCR553E6327HTSA1 is a high-performance semiconductor device designed for robust industrial applications, offering reliable switching and amplification capabilities. This transistor variant features optimized electrical characteristics that ensure stable operation under diverse environmental conditions, making it suitable for precision control circuits. Its compact package and efficient thermal management support integration into complex systems, enhancing overall device longevity. Engineers and sourcing specialists will find the BCR553E6327HTSA1 an effective solution for applications demanding consistent current handling and switching speed. For comprehensive product details, visit the IC Manufacturer website.
BCR553E6327HTSA1 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction Transistor | – |
| Collector-Emitter Voltage (Vce) | 40 | V |
| Collector Current (Ic) | 500 | mA |
| Power Dissipation (Pd) | 625 | mW |
| Current Gain (hFE) | 100 to 300 | – |
| Transition Frequency (fT) | 100 | MHz |
| Package Type | SOT-23 | – |
| Operating Temperature Range | -55 to +150 | ??C |
BCR553E6327HTSA1 Key Features
- High Current Gain: Ensures strong amplification, which improves signal quality and efficiency in switching applications.
- Compact SOT-23 Package: Facilitates easy PCB integration and saves board space, crucial for dense industrial electronics.
- Wide Operating Temperature Range: Maintains reliable performance in harsh industrial environments, ensuring system stability.
- Fast Transition Frequency: Supports high-speed switching, beneficial for signal processing and control circuits.
Typical Applications
- Signal amplification in industrial control systems, where stable current gain and switching speed are critical for precise operation.
- General-purpose switching in automated manufacturing equipment requiring consistent performance under fluctuating loads.
- Low-power amplification stages in sensor interfaces and measurement devices for accurate signal conditioning.
- Embedded circuits in industrial communication modules that demand compact components with reliable thermal management.
BCR553E6327HTSA1 Advantages vs Typical Alternatives
This device offers a superior balance of current gain and power dissipation compared to standard alternatives, enabling more efficient signal amplification with less heat generation. Its compact SOT-23 package improves integration density, while the broad operating temperature range enhances reliability in demanding industrial environments. These factors make it a preferred choice for engineers seeking robust, precise, and space-saving transistor solutions.
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BCR553E6327HTSA1 Brand Info
The BCR553E6327HTSA1 is produced by a reputable semiconductor manufacturer known for delivering reliable discrete components tailored for industrial electronics. This transistor is part of a series designed to meet rigorous industry standards, focusing on durability and consistent electrical performance. The brand??s commitment to quality ensures that each device undergoes stringent testing for parameters such as gain, voltage tolerance, and thermal stability, positioning this product as a dependable component in professional engineering applications.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for this transistor is rated at 500 milliamps (mA), making it suitable for moderate power amplification and switching tasks within industrial circuits.
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Which package type does this transistor use, and why is it beneficial?
This device is housed in a SOT-23 package, which is a small surface-mount package that facilitates compact PCB layouts and efficient heat dissipation, ideal for space-constrained industrial applications.
What temperature range can this transistor reliably operate in?
The transistor supports an operating temperature range from -55??C up to +150??C,
