BCR198WE6327BTSA1 Overview
The BCR198WE6327BTSA1 is a high-performance semiconductor device designed for precision control and robust operation in industrial electronics. This component integrates advanced features to support reliable switching and amplification in complex circuits. With optimized electrical characteristics and compact packaging, it is suited for demanding applications requiring efficient power management. Engineers and sourcing specialists will benefit from its stable performance parameters and compliance with industry standards, ensuring seamless integration into a broad range of electronic solutions. For further technical insights and procurement, visit IC Manufacturer.
BCR198WE6327BTSA1 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Transistor (BJT) |
| Polarity | NPN |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector Current (IC) | 0.5 A |
| Power Dissipation (Ptot) | 625 mW |
| Gain Bandwidth Product (fT) | 100 MHz |
| DC Current Gain (hFE) | 100 to 320 (at IC = 2 mA) |
| Package Type | SOT-23 |
| Operating Temperature Range | -55 ??C to +150 ??C |
BCR198WE6327BTSA1 Key Features
- High voltage tolerance: The device supports up to 80 V collector-emitter voltage, enabling use in circuits requiring robust voltage handling, improving durability.
- Moderate collector current rating: With a maximum collector current of 0.5 A, it suits applications needing moderate power switching without compromising reliability.
- Wide gain range: DC current gain between 100 and 320 ensures flexibility in amplification tasks, adapting to different circuit requirements for optimized performance.
- Compact SOT-23 package: The small footprint facilitates high-density PCB layouts and enhances thermal management, critical for industrial applications.
- Wide operating temperature: Functionality from -55 ??C to +150 ??C supports use in harsh environments, ensuring consistent operation across temperature extremes.
- High-frequency response: Gain bandwidth product of 100 MHz enables fast switching and signal amplification, essential for modern industrial control systems.
- Low power dissipation: Power rating of 625 mW contributes to energy-efficient circuit design, reducing thermal stress and improving overall system reliability.
Typical Applications
- Switching and amplification in industrial control systems, where reliable transistor operation under varying voltage and temperature conditions is critical for process automation.
- Signal amplification in sensor interfaces requiring stable gain and low noise performance over a wide temperature range.
- Driver stage in relay or solenoid control circuits, benefiting from the device??s moderate current capability and fast switching speed.
- General-purpose amplification in communication equipment, where high-frequency response and compact packaging support efficient design.
BCR198WE6327BTSA1 Advantages vs Typical Alternatives
This transistor offers a balanced combination of high voltage tolerance, moderate current capacity, and wide gain range, outperforming typical alternatives that may lack either voltage robustness or gain flexibility. Its compact SOT-23 package supports modern PCB designs with limited space, while the broad operating temperature range ensures reliability in harsh industrial environments. Additionally, the efficient power dissipation reduces thermal load, making it a preferred choice for applications demanding stable, long-term operation.
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BCR198WE6327BTSA1 Brand Info
The BCR198WE6327BTSA1 is manufactured by ON Semiconductor, a global leader in power and signal management semiconductor solutions. ON Semiconductor is known for delivering innovative, high-quality devices optimized for industrial, automotive, and consumer applications. This transistor embodies the company??s commitment to reliability and performance, featuring robust design and stringent quality control that meet the demanding
