BCR135E6433HTMA1 Overview
The BCR135E6433HTMA1 is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a robust collector current rating and optimized gain characteristics, this transistor is suitable for industrial and consumer electronics requiring reliable signal amplification. It offers a compact SOT-23 package that supports efficient thermal dissipation and easy PCB integration. With stable operation over a wide temperature range and low noise performance, it is ideal for precision analog circuits and low-power switching tasks. For further details and sourcing, visit IC Manufacturer.
BCR135E6433HTMA1 Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 45 V |
| Collector Current (IC) | 200 mA |
| Power Dissipation (Ptot) | 350 mW |
| Current Gain (hFE) | 100 – 400 |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | SOT-23 |
| Operating Temperature Range | -55??C to +150??C |
| Collector-Base Voltage (VCBO) | 50 V |
| Base-Emitter Voltage (VBE) | 5 V |
BCR135E6433HTMA1 Key Features
- High Current Handling: Supports up to 200 mA collector current, enabling robust switching and amplification in a wide range of circuits.
- Wide Voltage Range: With a collector-emitter voltage rating of 45 V, it accommodates moderate voltage applications, enhancing design flexibility.
- Compact SOT-23 Package: Facilitates space-saving PCB layouts and improved thermal performance, ideal for dense industrial and consumer electronics.
- High Gain and Frequency Response: Offers current gain between 100 and 400 and a transition frequency around 100 MHz, ensuring efficient signal amplification at high speeds.
- Wide Operating Temperature: Reliable operation from -55??C to +150??C supports demanding environments including automotive and industrial sectors.
Typical Applications
- Signal amplification in low-power analog circuits, including audio devices and sensor interfaces, where precise gain and low noise are critical.
- Switching elements in control circuits and relay drivers, providing reliable on/off control in industrial and consumer electronics.
- Driver stages in display backlighting or LED arrays, enabling efficient current regulation and improved brightness control.
- General-purpose amplification and switching in telecommunications and instrumentation equipment requiring moderate voltage and current handling.
BCR135E6433HTMA1 Advantages vs Typical Alternatives
This transistor delivers superior performance in moderate voltage and current applications with a compact footprint and stable gain characteristics. Compared to typical alternatives, it offers enhanced frequency response and a wider operating temperature range, increasing reliability in harsh conditions. Its SOT-23 package ensures easier integration and better thermal management, reducing overall system size and improving efficiency in industrial and consumer devices.
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BCR135E6433HTMA1 Brand Info
The BCR135E6433HTMA1 is produced by NXP Semiconductors, a global leader in semiconductor manufacturing known for high-quality analog and mixed-signal devices. NXP??s expertise in transistor technology ensures this device meets stringent industrial standards, delivering robust, reliable performance for demanding applications. The product benefits from NXP??s extensive global support network, comprehensive datasheets, and consistent manufacturing quality, making it a preferred choice for engineers and sourcing professionals.
FAQ
What is the maximum collector current rating for this transistor?
The transistor supports a maximum collector current of 200 mA, allowing it to handle moderate load currents suitable for switching and amplification in various electronic circuits.
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What package type does the transistor come in, and why is it important?
This device is housed in a compact SOT-23 package, which is important for saving






