DTA114EE-TP Toshiba NPN Transistor, High-Speed Switching, TO-92 Package

DTA114EE-TP Overview

The DTA114EE-TP is a high-performance bipolar junction transistor designed for precise amplification and switching applications. Featuring a low noise figure and high gain bandwidth product, this transistor delivers reliable performance under varied operating conditions. Optimized for industrial and consumer electronics, it supports efficient signal processing with excellent frequency response. The device??s robust thermal characteristics ensure stable operation at elevated temperatures, making it ideal for demanding environments. Sourcing specialists and engineers benefit from its compact SOT-23 package, which enables space-saving PCB designs without compromising performance. For more detailed product insights and purchasing options, visit IC Manufacturer.

DTA114EE-TP Technical Specifications

DTA114EE-TP Key Features

• High gain bandwidth product of 100 MHz enables efficient amplification in RF and low-noise signal circuits, improving overall system sensitivity.
• Low collector-emitter saturation voltage reduces power losses, enhancing energy efficiency in switching applications.
• Compact SOT-23 package supports high-density PCB layouts, facilitating space-saving designs in portable and embedded systems.
• Wide operating temperature range ensures reliable performance in harsh environments, suitable for automotive and industrial electronics.

Typical Applications

• Low-noise amplification stages in radio frequency (RF) circuits where signal integrity is critical for communication systems.
• Switching element in battery-powered devices requiring minimal power dissipation and compact form factors.
• Signal processing in sensor interfacing, enabling accurate data acquisition in industrial automation systems.
• General-purpose amplification tasks in consumer electronics such as audio equipment and portable instrumentation.

DTA114EE-TP Advantages vs Typical Alternatives

This transistor offers a balanced combination of high gain and low noise, outperforming many generic alternatives in sensitive amplification tasks. Its low saturation voltage contributes to energy-efficient operation, which is critical for battery-powered and portable devices. The robust SOT-23 packaging and wide temperature tolerance enhance reliability and ease of integration, making it a preferred choice for engineers prioritizing compact design and stable performance across varied industrial conditions.

DTA114EE-TP Brand Info

The DTA114EE-TP is a product from Diodes Incorporated, a global manufacturer known for high-quality discrete semiconductors and integrated circuits. Diodes Inc. specializes in reliable, cost-effective transistor solutions for consumer, industrial, and automotive applications. This transistor exemplifies the company??s commitment to delivering devices optimized for performance, efficiency, and compact design, supported by consistent manufacturing standards and global availability.

FAQ

What is the maximum collector current rating for the DTA114EE-TP?

The maximum collector current for this device is rated at 150 mA. This allows it to handle moderate current loads suitable for signal amplification and switching in various electronic circuits without risking damage or excessive power dissipation.

Can this transistor operate reliably at high temperatures?

Yes, the device supports an operating temperature range from -55??C up to +150??C. This wide range ensures stable performance in environments with significant temperature variations, such as automotive and industrial applications.

What type of package does the DTA114EE-TP come in, and why is it significant?

The transistor is housed in a SOT-23 package,