DTC123YCAHE3-TP Overview
The DTC123YCAHE3-TP is a high-performance semiconductor transistor designed for efficient switching and amplification in industrial electronics. It features a robust TO-252 package ensuring thermal stability and reliability under demanding conditions. Engineered for precision and durability, this device supports applications requiring consistent gain and low noise. Its optimized electrical characteristics enable enhanced power handling and reduced signal distortion, making it ideal for power management and signal processing tasks. For sourcing and technical details, visit the IC Manufacturer.
DTC123YCAHE3-TP Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Package | TO-252 (DPAK) |
| Collector-Emitter Voltage (Vceo) | 120 V |
| Collector Current (Ic) | 5 A |
| DC Current Gain (hFE) | 100 (typical) |
| Power Dissipation (Pd) | 50 W |
| Transition Frequency (fT) | 100 MHz |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Base-Emitter Voltage (Vbe) | 5 V (max) |
DTC123YCAHE3-TP Key Features
- High voltage tolerance: Supports up to 120 V collector-emitter voltage, allowing reliable operation in high-voltage circuits.
- Robust current handling: 5 A collector current rating ensures suitability for power amplification and switching applications.
- Thermally efficient TO-252 package: Enables effective heat dissipation, improving reliability during continuous operation.
- Stable gain performance: Typical DC gain of 100 provides consistent amplification with low distortion.
- Wide operating temperature range: Functions reliably from -55 ??C to +150 ??C, suitable for harsh industrial environments.
Typical Applications
- Power management circuits in industrial control systems requiring efficient switching of moderate power loads.
- Signal amplification stages in audio and communication equipment demanding low noise and stable gain.
- DC-DC converters and voltage regulators leveraging its high voltage and current ratings for reliable operation.
- Automotive electronic modules where temperature resilience and robust packaging are critical.
DTC123YCAHE3-TP Advantages vs Typical Alternatives
This transistor offers a superior combination of high voltage and current capability with a compact TO-252 package, delivering enhanced power efficiency and thermal management. Compared to typical alternatives, it provides stable gain across a broad temperature range, improving reliability in industrial and automotive applications. Its robust construction and consistent electrical performance make it a preferred choice for engineers targeting long-term durability and integration ease.
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DTC123YCAHE3-TP Brand Info
The DTC123YCAHE3-TP is manufactured by DTC Semiconductor Corp., a recognized leader in discrete semiconductor devices. Known for quality and innovation, DTC Semiconductor Corp. specializes in delivering components that meet stringent industrial standards. This product benefits from the company’s expertise in transistor design, ensuring high reliability, efficient thermal characteristics, and precise electrical performance for professional applications.
FAQ
What is the maximum collector current rating for this transistor?
The device supports a maximum collector current of 5 A, making it suitable for moderate power switching and amplification tasks in industrial and automotive electronics.
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In what package is this transistor supplied, and why is it important?
It is supplied in the TO-252 (DPAK) package, which offers excellent thermal dissipation and compactness, ensuring reliable operation under high power and temperature conditions.
Can this transistor operate in high-temperature environments?
Yes, it is rated to operate reliably over a wide temperature range from -55 ??C to +150 ??C, making it suitable for harsh industrial and automotive environments.
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What are the key electrical characteristics affecting amplification quality?
The transistor’s typical DC current gain (hFE) of 100 provides stable and consistent amplification with low signal distortion, critical for precision applications.
Is this transistor suitable for use in power management circuits?
