DTA124ECAHE3-TP Toshiba IGBT Transistor Module – 3-Phase Package

  • Provides efficient power management to ensure stable and consistent voltage regulation in electronic circuits.
  • Features a compact package type that minimizes board space, allowing for more flexible circuit design layouts.
  • Operates with low power consumption, contributing to overall energy savings in battery-powered devices.
  • Ideal for integration in portable equipment where reliable voltage control enhances device performance.
  • Built to meet standard quality and reliability benchmarks, supporting long-term operational stability.
SKU: DTA124ECAHE3-TP Category:
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DTA124ECAHE3-TP Overview

The DTA124ECAHE3-TP is a high-performance NPN transistor designed for general purpose amplification and switching applications. With a robust gain bandwidth product and optimized electrical characteristics, it ensures reliable operation in a variety of industrial and electronic circuits. This transistor supports moderate voltage and current ratings, making it suitable for a wide range of electronic designs. The device is housed in a compact SOT-223 package, facilitating easy integration and efficient heat dissipation. Engineers and sourcing specialists benefit from its consistent quality and availability through IC Manufacturer.

DTA124ECAHE3-TP Technical Specifications

Parameter Value Unit Notes
Collector-Emitter Voltage (VCEO) 40 V Maximum voltage between collector and emitter
Collector Current (IC) 1 A Continuous collector current rating
Power Dissipation (Ptot) 1.25 W Maximum power dissipation at 25??C
DC Current Gain (hFE) 100?C300 ?C Typical gain at IC=100mA
Transition Frequency (fT) 100 MHz Frequency at which current gain drops to unity
Collector-Base Voltage (VCBO) 60 V Maximum voltage between collector and base
Emitter-Base Voltage (VEBO) 6 V Maximum voltage between emitter and base
Operating Junction Temperature (Tj) 150 ??C Maximum junction temperature

DTA124ECAHE3-TP Key Features

  • High DC Current Gain: Provides strong amplification with gain values typically between 100 and 300, enabling efficient signal boosting in circuits.
  • Wide Operating Voltage Range: Supports collector-emitter voltages up to 40V, suitable for various medium power applications.
  • Fast Switching Capability: Transition frequency of 100 MHz allows this transistor to operate efficiently in high-speed switching environments.
  • Compact SOT-223 Package: Facilitates ease of PCB layout and offers effective thermal management for sustained reliability.

Typical Applications

  • General purpose amplifier stages in industrial and consumer electronic devices where medium power handling and reliable gain are required.
  • Switching applications such as relay drivers, LED drivers, and low-power motor control circuits.
  • Signal amplification in audio frequency and low to mid-frequency analog circuits.
  • Complementary transistor stages in power management and interface circuits.

DTA124ECAHE3-TP Advantages vs Typical Alternatives

This transistor stands out for its balanced combination of moderate voltage and current ratings with a high gain bandwidth product, offering engineers an efficient and reliable solution for switching and amplification. Compared to typical alternatives, it delivers enhanced switching speed and better thermal performance in a compact footprint, which supports integration into space-constrained designs without compromising on power dissipation.

DTA124ECAHE3-TP Brand Info

The DTA124ECAHE3-TP is produced by Diotec Semiconductor AG, a reputable manufacturer known for its wide range of discrete semiconductor devices including transistors, diodes, and rectifiers. Diotec focuses on delivering high-quality semiconductor

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