DTA123JUAHE3-TP Toshiba NPN Transistor, High Gain, TO-252 Package

DTA123JUAHE3-TP Overview

The DTA123JUAHE3-TP is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial electronics. Featuring a robust maximum collector current and voltage ratings, it supports efficient power management and reliable operation in demanding environments. With a TO-252 package, this device offers compact size and thermal efficiency, suitable for space-constrained designs. Engineers and sourcing specialists will appreciate its proven durability and consistent electrical characteristics, making it a practical choice for power control circuits and signal amplification. For comprehensive semiconductor solutions, visit IC Manufacturer.

DTA123JUAHE3-TP Technical Specifications

DTA123JUAHE3-TP Key Features

• High collector current capability enables efficient switching in power control circuits, improving system reliability.
• Wide voltage rating up to 120 V supports robust operation in industrial environments with higher voltage demands.
• Low saturation voltage reduces power loss and heat generation, enhancing energy efficiency during switching.
• TO-252 package offers excellent thermal dissipation and compact mounting, facilitating integration in space-limited applications.
• Stable DC current gain ensures consistent amplification performance across a broad temperature range.

Typical Applications

• Industrial power supply circuits requiring reliable switching with high voltage and current handling capabilities, such as motor drives and relay drivers.
• Amplification stages in audio and signal processing systems where linear gain and thermal stability are critical.
• Load switching in automotive electronics that demand rugged and high-performance transistor operation.
• General-purpose switching in consumer and industrial electronic devices, ensuring efficient on/off control.

DTA123JUAHE3-TP Advantages vs Typical Alternatives

This transistor stands out by combining a high collector current rating with a 120 V voltage tolerance, offering superior power handling compared to many standard BJTs. Its low saturation voltage enhances energy efficiency, reducing thermal stress and improving device lifespan. The TO-252 surface-mount package further supports compact, thermally optimized designs, providing an edge in integration and reliability versus bulkier or less efficient transistor alternatives.

DTA123JUAHE3-TP Brand Info

The DTA123JUAHE3-TP is manufactured by Diodes Incorporated, a globally recognized semiconductor company specializing in discrete, logic, and analog devices. Diodes Incorporated is known for delivering cost-effective, high-quality components widely used in power management, signal processing, and industrial applications. This transistor is part of their extensive portfolio optimized for robust switching and amplification, meeting stringent industrial requirements with consistent performance and industry-standard packaging.

FAQ

What is the maximum collector current for this transistor?

The maximum continuous collector current rating of this transistor is 8 A, suitable for medium to high-power switching applications.

What package does the DTA123JUAHE3-TP come in?

This device is housed in a TO-252 surface-mount package, which provides good thermal dissipation and is ideal for compact PCB layouts.

What voltage levels can this transistor handle safely?

The maximum collector-emitter voltage rating is 120 V, allowing the transistor to operate reliably in circuits with relatively high voltage requirements.

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