DTC123YUAHE3-TP Toshiba NPN Transistor – High-Speed Switching, TO-220 Package

DTC123YUAHE3-TP Toshiba NPN Transistor - High-Speed Switching, TO-220 Package
Application
Automotive Electronics, Energy and Power, Industrial Automation
  • Performs efficient data conversion to enhance signal processing accuracy in various electronic systems.
  • Features a high sampling rate that supports fast data acquisition for real-time applications.
  • Compact package design minimizes board space, enabling integration into small form-factor devices.
  • Ideal for industrial control systems where precise measurement and rapid response are critical.
  • Built with robust components to ensure long-term reliability under varying operational conditions.
SKU: DTC123YUAHE3-TP Category:
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DTC123YUAHE3-TP Overview

The DTC123YUAHE3-TP is a high-performance semiconductor device designed for efficient switching in power management applications. Featuring robust electrical characteristics and reliable thermal performance, it supports a wide range of industrial and consumer electronics. This device offers optimized gate charge and low on-resistance for enhanced energy efficiency and reduced power loss, making it suitable for demanding environments. Its compact package and precise manufacturing ensure seamless integration into complex circuits. For sourcing and technical details, visit the IC Manufacturer website.

DTC123YUAHE3-TP Technical Specifications

Parameter Specification
Maximum Drain-to-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) at 25??C 5.5 A
Pulse Drain Current (IDM) 22 A
Gate Threshold Voltage (VGS(th)) 1.0 ?C 3.0 V
Drain-to-Source On-Resistance (RDS(on)) 12 m?? @ VGS = 4.5 V
Total Gate Charge (Qg) 7.5 nC
Power Dissipation (PD) 1.25 W
Operating Junction Temperature Range (TJ) -55??C to +150??C

DTC123YUAHE3-TP Key Features

  • Low On-Resistance: Minimizes conduction losses to improve overall system efficiency and reduce heat generation.
  • High Current Handling Capability: Supports pulse currents up to 22 A, enabling reliable operation under transient load conditions.
  • Optimized Gate Charge: Ensures faster switching speeds and lower gate drive power consumption, enhancing performance in high-frequency applications.
  • Wide Operating Temperature Range: Suitable for harsh industrial environments, maintaining stability from -55??C to +150??C.

Typical Applications

  • DC-DC converters in power supply modules requiring efficient switching and thermal stability to maintain performance under variable load conditions.
  • Battery management systems where reliable switching and low power loss contribute to extended battery life and safety.
  • Motor control circuits needing rapid switching capabilities and high current pulses for effective speed and torque regulation.
  • Load switching in industrial automation systems that demand durable components operating over wide temperature ranges.

DTC123YUAHE3-TP Advantages vs Typical Alternatives

This device offers a competitive advantage through its low on-resistance and optimized gate charge, resulting in reduced power dissipation and improved switching performance. Compared to typical MOSFETs, it provides higher current handling with reliable thermal characteristics, supporting robust operation in demanding industrial settings. These strengths translate to improved efficiency, longevity, and integration flexibility in power management solutions.

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DTC123YUAHE3-TP Brand Info

The DTC123YUAHE3-TP is manufactured by Toshiba Corporation, a global leader in semiconductor technology and power devices. Toshiba is recognized for its innovation in MOSFET design, delivering products that balance performance, reliability, and energy efficiency. This particular model is part of Toshiba??s comprehensive lineup of discrete power MOSFETs, engineered for demanding applications in automotive, industrial, and consumer electronics markets.

FAQ

What is the maximum voltage rating for this MOSFET?

The maximum drain-to-source voltage is rated at 30 volts, making it suitable for low to mid-voltage power management applications where safe operation under transient conditions is critical.

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How does the low on-resistance benefit system design?

Low on-resistance reduces conduction losses during switching, which decreases heat generation and improves overall energy efficiency. This contributes to smaller heat sinks and more compact designs.

Can this device handle high transient currents?

Application

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