BCR 108F E6327 Battery Charger Controller IC ?C Single Package SMD Component

  • This device provides precise control for power conversion, improving efficiency in electronic systems.
  • Featuring a compact CBZ package, it enables significant board-space savings in tight layouts.
  • Its stable operation under varying loads ensures consistent performance in renewable energy applications.
  • The design supports reliable switching frequencies, enhancing system responsiveness and energy management.
  • Manufactured with rigorous quality checks, it delivers dependable functionality across extended operating conditions.
SKU: BCR 108F E6327 Category:
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BCR 108F E6327 Overview

The BCR 108F E6327 is a sensitive phototransistor designed for precise light detection and switching applications. With its robust construction and optimized spectral response, it ensures reliable operation in a variety of industrial and consumer environments. This component offers consistent performance in detecting visible light, making it ideal for integration into optical sensors, light barriers, and automation systems. Its compact package and efficient electrical characteristics support seamless incorporation into complex circuitry. For engineers and sourcing specialists seeking a dependable phototransistor, the BCR 108F E6327 provides an excellent balance of sensitivity, speed, and durability. More details are available at IC Manufacturer.

BCR 108F E6327 Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 30 V
Emitter-Collector Voltage (VECO) 5 V
Collector Current (IC) 50 mA
Power Dissipation (Ptot) 150 mW
Dark Current (ICEO) ?? 100 nA
Rise Time (tr) 5 ??s
Fall Time (tf) 5 ??s
Spectral Sensitivity Peak 870 nm
Package Type Plastic Package ?C

BCR 108F E6327 Key Features

  • High sensitivity to near-infrared light: Enables accurate detection in optical switching and sensing applications, improving signal reliability.
  • Low dark current: Minimizes false triggering and enhances detection precision in low-light environments.
  • Fast response times (rise/fall time of 5 ??s): Supports rapid switching and real-time monitoring in automated systems.
  • Compact plastic package: Facilitates easy integration into space-constrained electronic designs without compromising performance.

Typical Applications of BCR 108F E6327 Phototransistor

  • Optical sensors in industrial automation, where precise light detection ensures accurate position and speed measurement for machinery control.
  • Light barrier systems used in safety and security setups to detect object presence or motion.
  • Remote control receivers, enabling reliable infrared signal reception in consumer electronics and communication devices.
  • Ambient light detection for automatic brightness adjustment in display and lighting control solutions.

BCR 108F E6327 Advantages vs Typical Alternatives

This phototransistor offers superior sensitivity in the near-infrared spectrum combined with low dark current, which enhances detection accuracy compared to general-purpose phototransistors. Its fast switching speed enables more responsive system designs, while the compact plastic package supports versatile integration. These characteristics make it a preferred choice over alternatives that may have slower response times or higher noise levels, improving overall system reliability and efficiency.

BCR 108F E6327 Brand Info

The BCR 108F E6327 is a product from a leading semiconductor manufacturer known for its high-quality optoelectronic components. Renowned for manufacturing reliable phototransistors and photodiodes, the brand focuses on delivering devices with stable performance under diverse industrial conditions. This model is part of a broad portfolio designed to support precise optical sensing in automation, consumer electronics, and communication applications. The manufacturer ensures compliance with recognized quality standards, providing sourcing specialists and engineers with confidence in long-term availability and consistent device characteristics.

FAQ

What is the maximum collector current rating for this phototransistor?

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