MMDT5213W-AQ NPN Transistor – Signal Amplifier, SOT-23 Package by ON Semiconductor

  • This transistor provides efficient switching capabilities, enhancing circuit performance and energy use.
  • It features a low noise figure, which improves signal clarity in sensitive electronic applications.
  • The compact SOT-323 package reduces board space, allowing for denser circuit designs.
  • Ideal for RF amplification in communication devices, supporting stable and clear signal transmission.
  • Constructed for durability, ensuring consistent operation under varied environmental conditions.
SKU: MMDT5213W-AQ Category:
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MMDT5213W-AQ Overview

The MMDT5213W-AQ is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and consumer electronic circuits. It features a low saturation voltage and excellent gain characteristics, enabling efficient signal control and power management. This transistor is suitable for high-frequency operation and offers reliable thermal stability under varying operating conditions. With its compact package and robust electrical parameters, the device ensures seamless integration into complex systems. For sourcing and technical insights, visit IC Manufacturer.

MMDT5213W-AQ Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 50 V
Collector Current (IC) 150 mA
Power Dissipation (PTot) 350 mW
DC Current Gain (hFE) 100 to 300 (Typical)
Transition Frequency (fT) 100 MHz (Typical)
Collector-Base Voltage (VCBO) 60 V
Operating Temperature Range -55??C to +150??C
Package Type SOT-23 Surface Mount

MMDT5213W-AQ Key Features

  • Low Saturation Voltage: Enables efficient switching with minimal power loss, improving overall circuit efficiency.
  • High Current Gain: Provides strong amplification capability, essential for signal processing and amplification tasks.
  • High Transition Frequency: Supports high-speed switching applications up to 100 MHz, suitable for RF and fast digital circuits.
  • Wide Temperature Range: Ensures reliable operation across industrial temperature extremes, enhancing device durability.
  • Compact SOT-23 Package: Facilitates easy PCB integration in space-constrained designs without compromising performance.

Typical Applications

  • Switching circuits in power management modules where efficient load control is critical for battery-powered and portable devices.
  • Signal amplification in audio and RF circuits requiring stable gain and low noise performance.
  • High-frequency oscillator and driver stages in communication equipment benefiting from fast switching capabilities.
  • General-purpose transistor use in industrial automation systems for controlling relay, LED indicators, and sensor interfaces.

MMDT5213W-AQ Advantages vs Typical Alternatives

This transistor delivers superior switching efficiency due to its low saturation voltage and high gain, reducing power dissipation compared to common alternatives. Its extended operating temperature range and high transition frequency make it more reliable and versatile for demanding industrial applications. The compact SOT-23 package also offers better integration options in modern surface-mount designs, enhancing board space utilization without sacrificing electrical performance.

MMDT5213W-AQ Brand Info

The MMDT5213W-AQ is a product from the MMBT series widely manufactured by reputable semiconductor suppliers known for quality and consistency in transistor technology. This series emphasizes robust performance for industrial and consumer electronics with precise gain and switching characteristics. The device is commonly sourced from leading IC manufacturers specializing in analog and mixed-signal components, ensuring compliance with industry standards and availability for volume production. Its proven track record in reliability and electrical stability makes it a preferred choice among engineers and sourcing specialists.

FAQ

What is the maximum collector current rating for the MMDT5213W-AQ?

The maximum collector current for this transistor is 150 mA. This rating ensures the device can handle moderate current loads suitable for switching and amplification in low to medium power applications.

Can this transistor operate at high frequencies?

Yes, the device features a typical transition frequency of 100 MHz, making it suitable for high-frequency switching and amplification tasks such as RF circuits and fast digital switching applications.

What is the significance of the low saturation voltage in this transistor?

Low saturation voltage reduces power loss during switching, which improves energy efficiency and thermal performance. This is especially important in battery-powered and heat-sensitive designs.

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