MMDT5212W Diode Transistor Array – Dual NPN Transistor in SOT-363 Package

MMDT5212W Overview

The MMDT5212W is a high-performance NPN bipolar junction transistor designed for general-purpose switching and amplification in industrial and consumer electronics. This transistor offers reliable operation with robust electrical characteristics, making it suitable for a variety of applications including signal amplification, low-noise stages, and switching circuits. Its compact package and stable gain ensure consistent performance across temperature ranges. Sourcing specialists and engineers benefit from its proven reliability and ease of integration into existing designs. For detailed technical support and ordering information, visit the IC Manufacturer.

MMDT5212W Technical Specifications

MMDT5212W Key Features

• High Gain Bandwidth: With a typical transition frequency of 100 MHz, the device supports high-speed switching and amplification, essential for RF and high-frequency analog applications.
• Compact SOT-23 Package: Enables space-saving PCB layouts and surface-mount assembly, improving manufacturing efficiency for compact industrial designs.
• Wide Operating Temperature Range: Reliable performance from -55??C to +150??C ensures suitability in harsh industrial environments and automotive applications.
• Robust Collector Current Capability: Supports collector currents up to 150 mA, enabling effective switching and amplification in low to medium power circuits.

Typical Applications

• Signal amplification stages in audio and RF circuits, where low noise and high gain are critical for maintaining signal integrity.
• Switching applications in industrial controls and automation systems requiring fast and reliable transistor switching.
• General-purpose amplification in portable and battery-operated devices due to its low power dissipation and efficient operation.
• Temperature-sensitive environments like automotive sensor circuits benefiting from the transistor??s wide temperature tolerance.

MMDT5212W Advantages vs Typical Alternatives

This transistor offers a superior balance of gain, frequency response, and power handling compared to typical small-signal transistors. Its high gain bandwidth product and stable operation across a wide temperature range provide engineers with improved accuracy and reliability in demanding industrial applications. The compact SOT-23 package facilitates easy integration and cost-effective manufacturing, making it an optimal choice over larger or lower-performance alternatives.

MMDT5212W Brand Info

The MMDT5212W is manufactured by ON Semiconductor, a global leader in semiconductor solutions. Known for high-quality discrete components, ON Semiconductor ensures this transistor meets industry standards for performance and reliability. The product is widely used in industrial, automotive, and consumer electronics markets, reflecting the brand??s commitment to innovation and customer support. Comprehensive datasheets and application notes are available through ON Semiconductor??s distribution network and online portals.

FAQ

What type of transistor is the MMDT5212W?

The MMDT5212W is an NPN bipolar junction transistor designed primarily for general-purpose amplification and switching tasks in electronic circuits.

What is the maximum collector current rating for this device?

This transistor supports a maximum collector current of 150 mA, making it suitable for low to medium power applications.

Can the MMDT5212W be used in high-frequency applications?

Yes, with a typical transition frequency