MMDT5211W – ON Semiconductor NPN Transistor, High Voltage, SOT-23 Package

  • This transistor provides efficient switching for signal amplification in electronic circuits, enabling reliable performance.
  • Featuring a maximum collector current suitable for moderate power applications, it ensures effective load control.
  • The compact SOT-23 package minimizes board space, supporting dense circuit designs and easier integration.
  • Ideal for use in portable devices where size and power efficiency are critical for extending battery life.
  • Manufactured under controlled processes to maintain consistent electrical characteristics and operational stability.
SKU: MMDT5211W Category:
产品上方询盘

MMDT5211W Overview

The MMDT5211W is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications in industrial and consumer electronics. Featuring a robust design with a maximum collector current of 1A and collector-emitter voltage rating up to 40V, it ensures reliable operation in low to medium power circuits. Its compact SOT-23 package supports efficient PCB layout and thermal management. Optimized for switching speed and gain, this transistor offers excellent linearity and low noise, making it suitable for signal processing and driver stages. For detailed datasheet and purchasing options, visit IC Manufacturer.

MMDT5211W Technical Specifications

Parameter Value
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 1 A (max)
Power Dissipation (Ptot) 350 mW
DC Current Gain (hFE) 100 to 300
Transition Frequency (fT) 100 MHz (typical)
Package Type SOT-23 Surface Mount
Operating Temperature Range -55??C to +150??C
Base-Emitter Voltage (VBE) 1.2 V (max)

MMDT5211W Key Features

  • High collector current capacity: Supports up to 1A collector current, enabling robust performance in switching and amplification tasks.
  • Wide voltage rating: With a collector-emitter voltage of 40V, it is suitable for a variety of low to medium voltage circuits, ensuring device reliability.
  • Fast transition frequency: A typical transition frequency of 100 MHz allows for efficient high-speed switching and signal amplification.
  • Compact SOT-23 packaging: Enables space-saving PCB designs and enhances thermal dissipation for improved reliability in compact systems.
  • Wide operating temperature range: Maintains stable electrical characteristics from -55??C to +150??C, ideal for industrial environments.
  • High current gain: DC gain between 100 and 300 ensures efficient amplification with low base current requirements.

Typical Applications

  • General-purpose switching in low to medium power circuits such as relay drivers, LED drivers, and small motor controls, where reliable switching and amplification are required.
  • Signal amplification stages in audio equipment, sensors, and communication devices benefiting from low noise and high gain performance.
  • Interface and buffer stages in industrial control systems, ensuring robust signal integrity and fast switching response.
  • Complementary transistor pairs in push-pull amplifier circuits for power-efficient linear amplification.

MMDT5211W Advantages vs Typical Alternatives

This transistor offers a balanced combination of high current capacity and voltage rating within a compact SOT-23 package, providing superior integration into space-constrained designs. Its wide operating temperature range and stable gain characteristics enhance reliability compared to typical alternatives. Additionally, the fast switching speed and low noise performance improve overall circuit efficiency and signal integrity, making it a preferred choice for versatile industrial and consumer electronics applications.

MMDT5211W Brand Info

The MMDT5211W is a widely used transistor manufactured by reputable semiconductor producers specializing in discrete components for industrial and consumer electronics. Known for consistent quality and reliable supply, this device is part of a product line optimized for general-purpose amplification and switching. The brand??s focus on robust device construction and thorough quality control ensures dependable operation under harsh environmental conditions, supporting a broad range of design requirements from prototyping to mass production.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this device is 1 ampere, allowing it to handle moderate power switching and amplification tasks safely within its specified limits.

Can this transistor operate in high-temperature environments?

Yes, it supports an operating temperature range from -55??C up to +150??C, making it suitable for

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?