MMDT5114W Overview
The MMDT5114W is a high-performance NPN silicon transistor designed for switching and amplification in low to medium power applications. It features a robust gain bandwidth product and low collector-emitter saturation voltage, making it suitable for efficient signal processing and power management tasks. With a maximum collector current rating of 100mA and a collector-base voltage of 80V, this transistor ensures reliable operation in demanding industrial environments. Its compact SOT-23 package supports easy integration into compact circuit designs. For sourcing or detailed technical support, visit IC Manufacturer.
MMDT5114W Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Silicon |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 80 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 100 mA |
| Power Dissipation (Ptot) | 350 mW |
| Transition Frequency (fT) | 100 MHz |
| DC Current Gain (hFE) | 100 (typical) |
| Package | SOT-23 |
MMDT5114W Key Features
- High voltage rating: Supports up to 80 V collector-emitter voltage, enabling use in high-voltage switching applications.
- Fast switching speed: Transition frequency of 100 MHz ensures efficient operation in high-frequency circuits.
- Compact SOT-23 package: Facilitates space-saving PCB layouts and surface-mount assembly.
- Low collector-emitter saturation voltage: Minimizes power loss during switching to improve overall circuit efficiency and thermal management.
Typical Applications
- Signal amplification in low-power audio and RF circuits requiring reliable gain and fast switching response.
- General-purpose switching in industrial control systems where voltage and current ratings match operational needs.
- Driver stages for relay and LED circuits, benefiting from low saturation voltage and efficient switching.
- Portable electronic devices that demand compact, surface-mount transistors for space-constrained designs.
MMDT5114W Advantages vs Typical Alternatives
This transistor provides a competitive edge with its high voltage tolerance and fast switching speed compared to typical low-voltage transistors. Its low saturation voltage reduces power dissipation, enhancing efficiency and thermal performance. The small SOT-23 package supports modern compact design trends, offering integration flexibility unmatched by larger or less optimized alternatives.
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MMDT5114W Brand Info
The MMDT5114W is commonly associated with manufacturers specializing in discrete semiconductor devices for industrial and consumer electronics. It is widely available from multiple IC suppliers and distributors, known for consistent quality and reliability. This transistor is part of a family of small-signal transistors designed to meet stringent industrial standards, supporting diverse applications from switching to amplification in electronic circuits worldwide.
FAQ
What is the maximum collector current rating of this transistor?
The device supports a maximum collector current of 100 mA, suitable for low to medium power applications such as signal amplification and switching tasks.
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Can this transistor handle high voltage applications?
Yes, with a collector-emitter voltage rating of 80 V and collector-base voltage of 80 V, it is capable of operating safely in circuits requiring elevated voltage tolerance.
What package type does this transistor come in, and why is it important?
It is supplied in a SOT-23 surface-mount package, which is important for minimizing board space and enabling automated assembly in compact electronic devices.
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Is this transistor suitable for high-frequency switching?
With a transition frequency of 100 MHz, it is well-suited for high-frequency switching and amplification applications, ensuring fast response times and signal integrity.
How does the low collector-emitter saturation voltage benefit circuit design?
Lower saturation voltage reduces power loss and heat






