MMDT5214W Overview
The MMDT5214W is a high-performance NPN bipolar junction transistor (BJT) optimized for low noise and high gain applications. Designed for switching and amplification in various electronic circuits, this transistor delivers reliable performance with a maximum collector current of 500mA and a collector-emitter voltage rating of 30V. Its compact SOT-23 package ensures easy integration into space-constrained designs, making it suitable for signal amplification and low-level switching tasks. Engineers and sourcing specialists will appreciate its balance of gain, frequency response, and ruggedness, which supports efficient circuit design. For more detailed component selection, visit IC Manufacturer.
MMDT5214W Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vce) | 30 V |
| Collector-Base Voltage (Vcb) | 40 V |
| Emitter-Base Voltage (Veb) | 5 V |
| Collector Current (Ic) | 500 mA |
| Power Dissipation (Pd) | 350 mW |
| Transition Frequency (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 100 to 300 (depending on Ic) |
| Package | SOT-23 surface mount |
MMDT5214W Key Features
- High Gain Performance: Offers a DC current gain (hFE) range of 100 to 300, enabling effective signal amplification with minimal distortion.
- Low Noise Operation: Optimized for low noise, which makes it ideal for sensitive analog circuits such as RF amplifiers and sensor signal conditioning.
- Compact SOT-23 Package: Facilitates space-efficient PCB layouts while ensuring reliable thermal dissipation and mechanical stability.
- Wide Operating Voltage Range: Supports collector-emitter voltages up to 30V, allowing versatile use in varied industrial and consumer electronics.
Typical Applications
- Signal amplification in analog circuits, including audio preamplifiers and intermediate frequency amplification in communication devices, benefiting from its low noise and high gain.
- Switching applications in low voltage DC circuits where fast switching and reliable transistor operation are required.
- Driver stages for LEDs or small relays, leveraging the transistor??s capacity to handle moderate currents up to 500mA.
- General-purpose transistor use in portable electronics, instrumentation, and control systems with space constraints due to its small SOT-23 package.
MMDT5214W Advantages vs Typical Alternatives
Compared to typical small-signal NPN transistors, the device offers a superior combination of high current gain and low noise, which enhances signal integrity in sensitive circuits. Its compact SOT-23 package improves integration into dense PCB layouts, while the 30V voltage rating and 500mA collector current capacity provide flexibility across diverse applications. This balance of electrical performance and physical form factor makes it a reliable choice for engineers prioritizing efficiency and precision in their designs.
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MMDT5214W Brand Info
The MMDT5214W is manufactured by a reputable semiconductor supplier specializing in discrete components for industrial and consumer electronics. This transistor is part of a family known for consistent performance and quality manufacturing processes that meet industry standards. The brand??s focus on surface-mount technology ensures compatibility with automated assembly and modern manufacturing practices, providing customers with reliable products that support scalable production and long-term availability.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current (Ic) for this transistor is 500mA, allowing it to handle moderate current loads typical in signal switching and amplification tasks without risk of damage under recommended operating conditions.
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Can this transistor be used in high-frequency applications?
Yes, the device features a typical transition frequency (fT) of around 100 MHz, making it suitable






