BCR562E6327HTSA1 Overview
The BCR562E6327HTSA1 is a precision bipolar junction transistor (BJT) designed for high-performance amplification and switching applications. It offers a robust combination of current gain and switching speed, making it suitable for industrial control and signal processing tasks. Packaged in a compact SOT-23 form factor, this transistor supports efficient power management with reliable thermal performance. Its optimized electrical characteristics ensure consistent operation under varying environmental conditions, providing engineers and sourcing specialists a dependable solution for analog and digital circuit designs. For further technical details and sourcing, visit IC Manufacturer.
BCR562E6327HTSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 150 mA |
| Power Dissipation (Ptot) | 350 mW |
| DC Current Gain (hFE) | 100 to 300 |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package | SOT-23 |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Base-Emitter Voltage (VBE) | 0.6 to 0.7 V (typical) |
BCR562E6327HTSA1 Key Features
- High current gain: Ensures strong amplification capability with minimal input current, improving signal integrity in sensitive circuits.
- Wide voltage rating: Supports collector-emitter voltages up to 40 V, enabling use in moderate voltage switching applications.
- Compact SOT-23 package: Facilitates space-saving PCB layouts and simplifies automated assembly processes.
- Fast switching speed: Transition frequency around 100 MHz allows efficient operation in high-speed switching and RF stages.
- Robust thermal performance: The transistor maintains stable operation across a broad temperature range (-55 ??C to +150 ??C), ensuring reliability in harsh industrial environments.
Typical Applications
- Signal amplification in low-power analog circuits, such as sensor interfaces and audio preamplifiers, where stable gain and low noise are critical.
- Switching regulator circuits requiring efficient control of moderate collector currents.
- Driver stages for relays, solenoids, and small motors in industrial automation systems.
- High-frequency oscillator and mixer circuits in communication equipment due to its fast transition frequency.
BCR562E6327HTSA1 Advantages vs Typical Alternatives
This transistor provides a balanced combination of current gain, voltage tolerance, and switching speed that often surpasses generic discrete BJTs. Its high gain reduces base drive requirements, enhancing overall circuit efficiency. The compact SOT-23 package offers better integration in dense PCB designs compared to bulkier alternatives. Additionally, the robust operating temperature range and reliable power dissipation performance ensure stable operation in industrial settings where environmental variability can impact device reliability.
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BCR562E6327HTSA1 Brand Info
The BCR562E6327HTSA1 is part of the BCR series manufactured by ON Semiconductor, a global leader in power and signal management semiconductors. ON Semiconductor is renowned for delivering high-quality discrete components tailored for industrial, automotive, and consumer electronics markets. This transistor benefits from ON Semiconductor??s stringent manufacturing standards and extensive quality assurance processes, ensuring consistent performance and long-term reliability in demanding applications. The BCR series is widely recognized for its versatility, making it a preferred choice among engineers for low-power amplification and switching tasks.
FAQ
What is the maximum collector current rating of this transistor?
The transistor supports a maximum collector current of 150 mA, making it suitable for various low to moderate power amplification and switching applications without risk of overcurrent damage under recommended operating conditions.
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Can this transistor operate reliably at high temperatures?
Yes, it is rated for operation from -55 ??C up to +150 ??C, which ensures reliable performance in harsh





