BCR112E6327HTSA1 Bourns Resettable PPTC Fuse 6.3A 72V SMD/SMT Package

  • Provides precise voltage regulation to ensure stable operation of electronic circuits in various devices.
  • Features a compact package that reduces board space, facilitating denser circuit designs.
  • Operates efficiently to minimize power loss, improving overall system energy consumption.
  • Ideal for use in embedded systems where consistent power supply enhances device performance and longevity.
  • Manufactured to meet strict quality standards, ensuring reliable performance under typical operating conditions.
SKU: BCR112E6327HTSA1 Category:
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BCR112E6327HTSA1 Overview

The BCR112E6327HTSA1 is a precision NPN bipolar junction transistor designed for industrial and electronic switching applications. Featuring a maximum collector current of 100mA and a high gain bandwidth product, it delivers reliable performance in amplification and switching tasks. Its compact SOT-23 package supports efficient PCB layout and thermal management. With a collector-emitter voltage rating of 40V, this transistor offers robust operation under moderate power conditions. The device is ideal for signal amplification, general-purpose switching, and low noise applications. For detailed specifications and sourcing options, visit IC Manufacturer.

BCR112E6327HTSA1 Technical Specifications

Parameter Value Units
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) Max 100 mA
DC Current Gain (hFE) 100 to 300 (typical)
Power Dissipation (Ptot) 300 mW
Transition Frequency (fT) 100 MHz
Package Type SOT-23
Operating Temperature Range -55 to +150 ??C

BCR112E6327HTSA1 Key Features

  • High Current Gain: Ensures efficient signal amplification requiring less base drive current, improving overall circuit power efficiency.
  • Low Collector-Emitter Saturation Voltage: Minimizes power loss during switching, enhancing device reliability and reducing thermal stress.
  • Compact SOT-23 Package: Enables space-saving PCB designs while maintaining excellent thermal dissipation for stable operation.
  • Wide Operating Temperature Range: Supports industrial temperature conditions from -55??C to +150??C, suitable for harsh environments.

Typical Applications

  • Low power signal amplification in sensor interfaces and communication circuits, where precise gain and low noise are critical.
  • Switching applications in industrial control systems, providing reliable ON/OFF control of loads with minimal power dissipation.
  • General-purpose amplification and switching in consumer electronics requiring compact, efficient transistor solutions.
  • Driver stages for relay or LED circuits, offering consistent performance and integration ease with standard PCB footprints.

BCR112E6327HTSA1 Advantages vs Typical Alternatives

This transistor offers a notable advantage with its combination of high gain and low saturation voltage, providing improved switching efficiency and reduced heat generation compared to generic transistors. Its industrial-grade operating temperature range ensures reliability in demanding environments. The compact SOT-23 package facilitates high-density PCB design without sacrificing thermal performance, making it superior in integration and durability against typical alternatives.

BCR112E6327HTSA1 Brand Info

The BCR112E6327HTSA1 is manufactured by ON Semiconductor, a leading global supplier of semiconductor solutions known for innovation and quality. ON Semiconductor specializes in discrete, analog, and power components used widely across automotive, industrial, and consumer electronics sectors. This transistor aligns with their portfolio??s reputation for robust, high-performance devices designed to meet rigorous industrial standards.

FAQ

What is the maximum collector current rating for this transistor?

The device supports a maximum collector current of 100mA, which makes it suitable for low to medium power switching and amplification tasks without compromising reliability.

Can this transistor be used in high-frequency switching applications?

Yes, with a transition frequency of approximately 100MHz, this transistor performs well in high-frequency switching circuits, including RF amplification and fast digital switching.

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