BCR166WH6327XTSA1 Overview
The BCR166WH6327XTSA1 is a high-performance phototransistor designed for precise optical sensing applications. Engineered with a wide spectral response and fast switching characteristics, it excels in converting light signals into electrical outputs with excellent sensitivity and stability. This phototransistor is optimized for use in industrial, consumer, and communication equipment, offering reliable operation under varying environmental conditions. Its compact surface-mount package simplifies integration into complex electronic assemblies. For engineers and sourcing specialists seeking a robust optoelectronic solution, the BCR166WH6327XTSA1 from IC Manufacturer delivers dependable, consistent performance with minimal power consumption and superior signal fidelity.
BCR166WH6327XTSA1 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | NPN Silicon Phototransistor |
| Peak Sensitivity Wavelength | 940 nm |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Collector Current (IC) | 5 mA (max) |
| Rise Time | 10 ??s (typical) |
| Fall Time | 10 ??s (typical) |
| Collector Dark Current | 50 nA (max) |
| Operating Temperature Range | -25??C to +85??C |
| Package Type | SMD (Surface Mount Device) |
BCR166WH6327XTSA1 Key Features
- High Sensitivity Phototransistor: Converts low-level infrared light into electrical signals efficiently, facilitating accurate detection in low-light environments.
- Fast Switching Response: Typical rise and fall times of 10 ??s enable rapid signal processing, essential for high-speed optical communication and sensing.
- Wide Operating Voltage and Current Range: Supports up to 30 V collector-emitter voltage and 5 mA collector current, ensuring compatibility with various circuit designs.
- Compact Surface Mount Package: Enables easy automated assembly and space-saving integration into modern electronic devices.
- Low Dark Current: Minimal leakage current enhances signal integrity, reducing noise for improved measurement accuracy.
- Robust Temperature Tolerance: Reliable operation across -25??C to +85??C supports diverse industrial and consumer application environments.
Typical Applications
- Infrared remote control receivers in consumer electronics, providing accurate signal detection for reliable device operation.
- Optical sensors in industrial automation, allowing precise object detection and position sensing with fast response times.
- Data communication systems that require fast and sensitive phototransistors for transmitting infrared signals over short distances.
- Safety and security systems, including presence detection and light barrier applications, benefiting from stable performance and low noise.
BCR166WH6327XTSA1 Advantages vs Typical Alternatives
This phototransistor offers superior sensitivity and faster switching speeds compared to many standard devices, enabling more accurate and timely optical signal detection. Its low dark current reduces noise interference, enhancing signal clarity in critical applications. The wide operating voltage range and robust temperature tolerance provide greater design flexibility and reliability. Additionally, its compact surface-mount package supports efficient manufacturing and integration, making it a strong choice over traditional through-hole alternatives.
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BCR166WH6327XTSA1 Brand Info
The BCR166WH6327XTSA1 is produced by a leading semiconductor manufacturer known for high-quality optoelectronic components. This brand specializes in phototransistors and related sensors that cater to diverse sectors including industrial automation, consumer electronics, and communication technologies. The company??s commitment to precision engineering and reliability is reflected in this device??s design, ensuring consistent performance and longevity. Sourcing this product guarantees access to comprehensive support and compatibility with industry standards.
FAQ
What is the primary function of the BCR166WH6327XTSA1 phototransistor?
The primary function is to detect infrared light and convert it into
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