FJV3103RMTF Panasonic IGBT Transistor Module, High Power, TO-247 Package

  • FJV3103RMTF provides precise voltage regulation, ensuring stable power delivery for sensitive electronic components.
  • It features a low dropout voltage, which enhances efficiency and maintains performance under varying input conditions.
  • The compact LFCSP package reduces board space requirements, enabling denser circuit designs in limited spaces.
  • Ideal for portable devices where reliable power management extends battery life and improves overall system stability.
  • Manufactured with rigorous quality controls to ensure consistent operation and long-term reliability in demanding environments.
SKU: FJV3103RMTF Category:
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FJV3103RMTF Overview

The FJV3103RMTF is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It features a low collector-emitter saturation voltage and high gain, making it suitable for a variety of industrial and consumer electronic circuits. This transistor offers reliable operation with a maximum collector current of 150 mA and a voltage rating that supports moderate power levels. Its compact SOT-23 surface-mount package allows for efficient PCB layout and space-saving designs. The device is manufactured to meet stringent quality standards, ensuring consistent performance in demanding environments. For detailed technical support and sourcing, visit the IC Manufacturer.

FJV3103RMTF Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 150 mA
DC Current Gain (hFE) 100 min at IC = 10 mA
Power Dissipation (Ptot) 350 mW
Transition Frequency (fT) 100 MHz
Package SOT-23 Surface-Mount

FJV3103RMTF Key Features

  • High Current Gain: Provides efficient amplification with a minimum gain of 100, ensuring signal integrity in analog circuits.
  • Low Collector-Emitter Saturation Voltage: Minimizes power loss and heat generation during switching, improving overall energy efficiency.
  • Compact SOT-23 Package: Ideal for space-constrained PCB layouts, allowing for high-density circuit designs.
  • Fast Switching Speed: With a transition frequency of 100 MHz, it supports high-frequency applications and rapid signal processing.

Typical Applications

  • General-purpose switching in industrial control systems where reliable transistor operation is critical for signal switching and amplification.
  • Audio amplifiers requiring low distortion and stable gain performance for clear sound reproduction.
  • Battery-powered devices benefiting from low saturation voltage to extend battery life and reduce thermal dissipation.
  • Signal processing circuits in communication equipment where fast switching speed enhances data transfer rates.

FJV3103RMTF Advantages vs Typical Alternatives

This transistor offers a balanced combination of low saturation voltage and high current gain, outperforming many typical alternatives that may sacrifice efficiency for gain or vice versa. Its small SOT-23 package supports compact designs, while its moderate power handling and fast transition frequency make it versatile across multiple applications. These advantages translate into improved energy efficiency, reliable switching performance, and integration ease, making it a preferred choice for engineers seeking dependable bipolar transistors.

FJV3103RMTF Brand Info

The FJV3103RMTF is produced by a reputable semiconductor manufacturer known for delivering reliable discrete components for industrial and consumer electronics. This transistor is part of the company??s portfolio emphasizing high-quality, cost-effective bipolar transistors with consistent electrical characteristics and robust packaging. The brand maintains rigorous quality control and supports global distribution channels, ensuring availability and technical assistance for engineers and sourcing specialists worldwide.

FAQ

What is the maximum collector current of the transistor?

The maximum collector current for this device is rated at 150 mA, allowing it to handle moderate load currents in switching and amplification applications without compromising reliability.

Can this transistor operate at high frequencies?

Yes, with a transition frequency of 100 MHz, it supports high-frequency operation suitable for signal processing and communication circuit applications requiring fast switching.

What packaging does the transistor use, and why is it beneficial?

The transistor is housed in a SOT-23 surface-mount package, which is compact and allows for efficient PCB space utilization. This packaging is ideal for high-density electronic designs and automated assembly.

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