FJN4310RBU Overview
The FJN4310RBU is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Engineered with a robust silicon planar epitaxial structure, it offers reliable operation in a variety of industrial and consumer electronic systems. This transistor supports medium power and medium voltage operations, making it an ideal choice for amplification stages and switching circuits that require efficient current handling and good gain characteristics. For detailed technical support and sourcing, visit IC Manufacturer.
FJN4310RBU Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 0.8 | A |
| Power Dissipation (Ptot) | 0.8 | W |
| Transition Frequency (fT) | 100 | MHz |
| DC Current Gain (hFE) | 40?C300 | ?C |
| Operating Junction Temperature (Tj) | 150 | ??C |
FJN4310RBU Key Features
- High current handling capability: Supports collector currents up to 0.8 A, enabling efficient switching and amplification in medium-power applications.
- Wide voltage rating: Collector-emitter voltage of 40 V and collector-base voltage of 60 V provide flexibility in various circuit designs requiring moderate voltage handling.
- Excellent frequency response: Transition frequency of 100 MHz ensures good performance in high-speed signal amplification tasks.
- Robust thermal performance: Maximum junction temperature of 150??C allows reliable operation under demanding thermal conditions.
- Wide DC gain range: Current gain between 40 and 300 delivers versatility for different gain requirements in amplification stages.
- Planar epitaxial silicon construction: Ensures high reliability and consistent electrical characteristics for long-term application stability.
Typical Applications
- Audio amplification circuits requiring reliable and linear medium power transistors to drive speakers or preamplifier stages.
- Switching regulators and power management circuits in industrial control systems.
- Driver stages for relay control and small motor drivers in automation equipment.
- General-purpose amplification and switching in consumer electronic devices such as radios and televisions.
FJN4310RBU Advantages vs Typical Alternatives
This transistor offers a balanced combination of moderate voltage and current capability with a high transition frequency, outperforming many standard BJTs in similar packages. Its wide current gain range allows for flexible circuit designs, while the robust thermal rating ensures reliability in industrial environments. Compared to typical alternatives, it provides improved switching speed and stable performance under varying load conditions, making it a preferred choice for medium power amplification and switching applications.
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FJN4310RBU Brand Info
The FJN4310RBU is manufactured by a reputable semiconductor company known for delivering reliable bipolar junction transistors tailored for industrial and consumer electronics. The product is part of a broader portfolio that emphasizes quality silicon planar epitaxial devices, designed to meet stringent performance and durability standards. This transistor series is widely recognized for its consistency and applicability in diverse electronic system designs, supported by comprehensive datasheets and technical assistance from the brand??s global support network.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current is rated at 0.8 amperes. This allows
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