MMBTRC118SS-AQ MOSFET Transistor – N-Channel, 100V, Bulk Pack

  • This device provides efficient signal conversion to support precise system operations in various electronics.
  • Featuring a key frequency specification, it ensures stable performance critical for timing-sensitive applications.
  • The compact package design allows for effective board-space utilization in densely populated circuit layouts.
  • Ideal for integration in communication equipment where reliable signal processing enhances overall functionality.
  • Manufactured under strict quality controls to deliver consistent performance and long-term operational stability.
SKU: MMBTRC118SS-AQ Category:
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MMBTRC118SS-AQ Overview

The MMBTRC118SS-AQ is a high-performance silicon NPN transistor designed for switching and amplification applications within industrial and consumer electronics. Featuring a robust maximum collector current of 200mA and a collector-emitter voltage rating of 80V, this device delivers reliable operation in moderate power circuits. Its surface-mount SOT-23 package ensures compactness and ease of assembly in automated production environments. Engineered for efficient switching and low saturation voltage, it supports improved energy efficiency and thermal management. This transistor is a trusted choice for engineers seeking durable, cost-effective solutions from IC Manufacturer.

MMBTRC118SS-AQ Technical Specifications

Parameter Specification
Type NPN Silicon Transistor
Maximum Collector-Emitter Voltage (VCEO) 80 V
Maximum Collector Current (IC) 200 mA
Power Dissipation (Ptot) 350 mW
Transition Frequency (fT) 100 MHz (typical)
DC Current Gain (hFE) 100 to 300 (varies by test conditions)
Package SOT-23 Surface Mount
Operating Temperature Range -55??C to +150??C

MMBTRC118SS-AQ Key Features

  • High Voltage Handling: Supports up to 80V collector-emitter voltage, enabling reliable operation in medium-voltage switching applications.
  • Moderate Collector Current Capacity: 200mA maximum current allows efficient control of low to moderate power loads in amplification circuits.
  • Low Saturation Voltage: Minimizes power loss and heat generation, enhancing overall circuit efficiency and thermal stability.
  • Compact SOT-23 Package: Facilitates automatic placement in high-density PCB layouts, reducing board space and manufacturing costs.

Typical Applications

  • Switching elements in power management circuits, where moderate voltage and current handling are required with minimal heat dissipation.
  • Signal amplification in audio and RF circuits, benefiting from the transistor??s high gain and frequency response.
  • General-purpose switching in industrial control systems, providing reliable on/off control for sensors and actuators.
  • Portable device circuitry where compact size and efficient power usage are critical for battery-powered operation.

MMBTRC118SS-AQ Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage rating, current capacity, and gain that surpasses many general-purpose alternatives. Its low saturation voltage reduces power dissipation compared to standard switching transistors, improving energy efficiency. The compact SOT-23 package supports miniaturized designs and automated assembly, unlike bulkier through-hole devices. Additionally, it operates reliably over a wide temperature range, enhancing system robustness in industrial environments.

MMBTRC118SS-AQ Brand Info

The MMBTRC118SS-AQ is manufactured under stringent quality controls by ON Semiconductor, a leading global supplier of semiconductor components. ON Semiconductor specializes in providing innovative, energy-efficient solutions tailored for industrial, automotive, and consumer electronic markets. This transistor is part of their extensive portfolio of discrete devices designed to meet stringent performance and reliability standards demanded by modern electronic systems.

FAQ

What is the maximum voltage rating for the MMBTRC118SS-AQ transistor?

The maximum collector-emitter voltage (VCEO) for this transistor is rated at 80 volts. This rating defines the highest voltage the device can tolerate between the collector and emitter terminals without breakdown, ensuring reliable operation within this limit.

Can this transistor handle high-frequency signals?

Yes, the device features a typical transition frequency (fT) of approximately 100 MHz, making it suitable for moderate high-frequency amplification and switching applications such as RF circuits and signal processing.

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