DTC123EUA-TP Overview
The DTC123EUA-TP is a high-performance discrete transistor designed for efficient switching and amplification applications in industrial and consumer electronics. This device offers reliable operation with excellent gain characteristics and low saturation voltage, making it suitable for power management and signal processing tasks. Its robust package ensures thermal stability and ease of integration into compact circuit designs. Ideal for engineers and sourcing specialists, the transistor delivers consistent performance across a broad range of operating conditions. For detailed technical support and purchasing options, visit IC Manufacturer.
DTC123EUA-TP Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 800 mA |
| Gain Bandwidth Product (fT) | 100 MHz |
| DC Current Gain (hFE) | 100 to 300 |
| Power Dissipation (Ptot) | 625 mW |
| Package Type | SOT-23 Surface Mount |
| Transition Frequency | 100 MHz |
| Operating Temperature Range | -55 ??C to +150 ??C |
DTC123EUA-TP Key Features
- High Gain: Provides current amplification with an hFE range up to 300, enabling efficient signal amplification in low-power circuits.
- Low Collector-Emitter Saturation Voltage: Minimizes power loss during switching, improving overall energy efficiency in power management applications.
- Compact SOT-23 Package: Facilitates high-density PCB layouts and surface-mount assembly, reducing board space and manufacturing costs.
- Wide Operating Temperature Range: Ensures stable performance in harsh industrial environments, enhancing device reliability and longevity.
- Fast Switching Capability: Supports frequencies up to 100 MHz, suitable for high-speed signal processing and communication circuits.
Typical Applications
- Switching and amplification in power supply circuits, where efficient current control and low loss are critical for system reliability and energy savings.
- Signal amplification stages in audio and RF circuits, leveraging the device??s high gain and frequency response.
- Motor control circuits requiring fast switching and robust operation in varying temperature conditions.
- General-purpose discrete transistor applications in embedded systems, sensors, and industrial automation equipment.
DTC123EUA-TP Advantages vs Typical Alternatives
This transistor offers superior gain and switching speed compared to many standard discrete BJTs, while maintaining a low saturation voltage that reduces power dissipation. Its compact SOT-23 package enables integration in space-constrained designs without sacrificing thermal performance. The wide temperature range and reliable operation make it an excellent choice for industrial use, providing enhanced durability and efficiency over typical transistors in similar application classes.
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DTC123EUA-TP Brand Info
The DTC123EUA-TP is manufactured by a leading global semiconductor supplier known for high-quality discrete components optimized for industrial and consumer electronics markets. This product line emphasizes robust performance, consistent manufacturing standards, and broad availability to support OEMs and design engineers. The brand behind this transistor maintains rigorous quality control and comprehensive technical documentation, ensuring reliable device operation and ease of integration into diverse electronic systems.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current for this device is 800 mA. This rating defines the highest continuous current the transistor can safely conduct without risking damage or performance degradation.
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Can this transistor operate in high-frequency switching applications?
Yes, with a transition frequency of approximately 100 MHz, the transistor is suitable for high-speed switching and amplification tasks common in RF and communication circuits.






