DDTA144WUA-7-F Overview
The DDTA144WUA-7-F is a high-performance RF transistor designed for demanding power amplification applications in industrial and communication systems. Featuring a robust silicon laterally diffused transistor (LDMOS) technology, this device delivers efficient power gain with excellent linearity across a broad frequency range. Its rugged construction ensures reliable operation under high voltage and thermal stress, making it suitable for base station transmitters and other high-power RF circuits. Engineers and sourcing specialists will appreciate its ease of integration and consistent performance, supported by detailed datasheet parameters available from IC Manufacturer.
DDTA144WUA-7-F Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Silicon Laterally Diffused Transistor (LDMOS) |
| Frequency Range | Up to 400 MHz |
| Power Output (P1dB) | Approximately 144 W |
| Gain (Typical) | 14 dB @ 400 MHz |
| Operating Voltage | 28 V DC |
| Drain Efficiency | Up to 60% |
| Package Type | Flanged Package with Mounting Holes |
| Thermal Resistance (Junction to Case) | 0.25 ??C/W |
| Maximum Drain Current | 12 A |
| Impedance | 50 ?? |
DDTA144WUA-7-F Key Features
- High Power Output Capability: Delivers up to 144 W power output, enabling robust amplification in RF communication systems.
- Wide Frequency Range: Operates efficiently up to 400 MHz, supporting versatile applications in VHF/UHF bands.
- Excellent Thermal Management: Low thermal resistance package facilitates improved heat dissipation, enhancing reliability and longevity.
- Robust LDMOS Technology: Provides high linearity and ruggedness for consistent performance under demanding operating conditions.
DDTA144WUA-7-F Advantages vs Typical Alternatives
Compared to typical RF transistors, this device offers superior power density and thermal handling thanks to its optimized LDMOS design and low thermal resistance package. Its high gain and efficiency reduce power consumption and improve signal integrity, making it a preferred choice for engineers seeking reliable amplification with minimal distortion and enhanced operational stability.
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Typical Applications
- RF Power Amplification in Base Stations: Ideal for use in cellular and broadcast base stations requiring high linear power amplification with reliable thermal performance.
- Industrial RF Transmitters: Suitable for driving high-power industrial transmitters operating in VHF/UHF frequency bands.
- Communication Infrastructure Equipment: Used in repeaters and amplifiers for wireless communication systems demanding consistent gain and ruggedness.
- Test and Measurement Equipment: Applicable in RF test setups requiring stable high-power output across a wide frequency range.
DDTA144WUA-7-F Brand Info
The DDTA144WUA-7-F is manufactured under stringent quality standards by a leading IC Manufacturer specializing in high-reliability RF components. This product line is recognized for its precision-engineered silicon LDMOS transistors designed to meet the rigorous demands of industrial and communication sectors. The manufacturer supports the device with comprehensive datasheets and application notes, ensuring seamless integration and optimized performance in professional RF design projects.
FAQ
What type of transistor technology does the DDTA144WUA-7-F use?
This device utilizes Silicon Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology, which is well-regarded for its high power capability, linearity, and robustness in RF applications.
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What is the maximum operating frequency for this transistor?
The transistor is designed to operate efficiently at frequencies up to 400 MHz, making it suitable for VHF and UHF band applications common in communication systems.
