DDTC123ECAQ-7-F Overview
The DDTC123ECAQ-7-F is a high-performance semiconductor device designed for industrial and commercial electronics applications. Offering robust electrical characteristics and a compact package, it ensures reliable operation under demanding conditions. This component integrates advanced process technology to deliver consistent switching performance with enhanced thermal stability. Its optimized pin configuration supports efficient circuit integration, making it suitable for power management and signal control tasks. Engineers and sourcing specialists will appreciate its balance of precision, durability, and ease of implementation, aligning with modern design requirements. For detailed technical support and procurement, visit IC Manufacturer.
DDTC123ECAQ-7-F Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Dual NPN Transistor |
| Collector-Emitter Voltage (VCEO) | 45 V |
| Collector Current (IC) | 150 mA |
| DC Current Gain (hFE) | 100 (min) at IC=10 mA |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | SOT-363 (6-Lead MiniMELF) |
| Operating Temperature Range | -55??C to +150??C |
| Power Dissipation (Ptot) | 300 mW |
| Base-Emitter Voltage (VBE) | 0.7 V (typical) |
| Storage Temperature Range | -65??C to +150??C |
DDTC123ECAQ-7-F Key Features
- Dual NPN Configuration: Integrates two NPN transistors in a single package, reducing PCB space and simplifying circuit design.
- High Collector-Emitter Voltage Rating: Supports up to 45 V, enabling reliable operation in medium-voltage switching applications.
- Wide Operating Temperature Range: Functions effectively from -55??C to +150??C, suitable for harsh industrial environments.
- High Transition Frequency: Offers 100 MHz typical fT, ensuring fast switching and improved signal amplification.
- Compact SOT-363 Package: Enables high-density assembly while maintaining thermal efficiency and mechanical robustness.
- Stable Electrical Characteristics: Provides consistent gain and low leakage currents, enhancing circuit reliability.
DDTC123ECAQ-7-F Advantages vs Typical Alternatives
This device offers superior integration by combining two NPN transistors in a single compact package, reducing board space and assembly complexity. It delivers higher voltage tolerance and faster transition frequency than many standard discrete transistors. Its extended temperature range and low power dissipation improve reliability in industrial applications. These factors contribute to enhanced performance and durability compared to typical alternatives, making it a preferred choice for precise switching and amplification tasks.
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Typical Applications
- Signal amplification and switching in industrial control systems, where reliable operation under varying temperature and voltage conditions is critical.
- Use in power management circuits requiring compact dual-transistor solutions to optimize space and thermal characteristics.
- Integration into communication equipment for high-frequency signal processing due to its 100 MHz transition frequency.
- Implementation in consumer electronics for efficient driver circuits and interface components with low power consumption.
DDTC123ECAQ-7-F Brand Info
The DDTC123ECAQ-7-F is manufactured under stringent quality controls by a leading IC Manufacturer specializing in advanced semiconductor solutions. This product reflects the brand??s commitment to delivering high-reliability components tailored for industrial and commercial electronics. With decades of experience in transistor technology, the brand ensures each device meets exacting standards for electrical performance and durability. The DDTC123ECAQ-7-F exemplifies their portfolio’s focus on innovation, efficiency, and customer-centric design.
FAQ
What type of transistor configuration does the DDTC123ECAQ-7-F provide?
This device features a dual NPN transistor configuration, integrating two matched NPN transistors into a single small-outline package. This configuration allows
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