DDTC114ECAQ-13-F Overview
The DDTC114ECAQ-13-F is a high-performance semiconductor device designed for precision switching and amplification applications. Engineered with robust electrical characteristics and packaged for industrial reliability, it offers excellent thermal stability and low noise operation. This component is optimized for integration in complex electronic circuits requiring consistent performance under varying environmental conditions. Its compact design supports efficient board layouts, making it ideal for space-constrained industrial systems. For detailed specifications and sourcing, visit IC Manufacturer.
DDTC114ECAQ-13-F Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Dual NPN Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 100 mA |
| Gain Bandwidth Product (fT) | 100 MHz |
| Transition Frequency | 100 MHz |
| Package Type | SOT-363 (SC-70-6) |
| Power Dissipation | 300 mW |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Noise Figure | 1.0 dB (typical) |
DDTC114ECAQ-13-F Key Features
- Dual NPN Transistor Configuration: Enables compact circuit design with two matched transistors in a single package, reducing board space and simplifying layout.
- High Gain Bandwidth (100 MHz): Supports high-frequency amplification and switching, critical for communication and signal processing applications.
- Wide Operating Temperature Range: Ensures reliable performance in harsh industrial environments from -55 ??C to +150 ??C.
- Low Noise Figure: Maintains signal integrity in sensitive analog circuits, enhancing overall system accuracy.
DDTC114ECAQ-13-F Advantages vs Typical Alternatives
This device offers superior integration with its dual transistor design, saving board space compared to discrete components. Its high transition frequency and low noise figure enable enhanced signal fidelity and faster switching speeds, outperforming many standard transistors. Additionally, its broad temperature tolerance and power dissipation capabilities deliver reliable operation under demanding industrial conditions.
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Typical Applications
- Signal amplification in RF and analog circuits requiring low noise and high gain bandwidth, often utilized in telecommunications equipment and sensor interfaces.
- Switching applications in industrial control systems where compact, reliable transistor pairs improve circuit efficiency.
- Audio preamplifiers benefiting from the device??s low noise and stable gain across temperature variations.
- High-frequency oscillator circuits in measurement and test equipment demanding precise transistor matching and performance.
DDTC114ECAQ-13-F Brand Info
The DDTC114ECAQ-13-F is part of a well-established semiconductor product line, known for quality and innovation in transistor technology. Designed with stringent quality control and industrial standards, this device reflects the brand??s commitment to delivering reliable and high-performance components tailored for professional engineers and sourcing specialists. It supports a broad range of industrial electronics applications, combining advanced technology with proven durability.
FAQ
What is the maximum collector current for this transistor device?
The maximum collector current for this dual NPN transistor device is specified at 100 mA, suitable for moderate power amplification and switching tasks in industrial circuits.
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Can this device operate in extreme temperature environments?
Yes, it supports an operating temperature range from -55 ??C to +150 ??C, making it reliable for use in harsh and varying environmental conditions typical of industrial applications.
What package type does this transistor come in?
This component is housed in a SOT-363 package, also known as SC-70-6, which is a small outline transistor package designed for compact PCB layouts and easy surface mounting.
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How does the gain bandwidth product influence the device??s performance?
The gain bandwidth product of 100 MHz indicates the transistor??s ability to amplify signals at high frequencies, making it suitable for RF and high-speed analog circuitry where fast response and stable gain are essential.





