DDTA122TU-7-F MOSFET Transistor, High-Speed Switching, TO-220 Package

  • DDTA122TU-7-F amplifies intermediate frequency signals to improve overall system signal clarity and performance.
  • Operating frequency range supports effective signal processing in communication and radar modules.
  • Its compact package offers board-space savings, facilitating integration into dense circuit designs.
  • Ideal for use in RF front-end stages, enhancing signal quality in wireless communication devices.
  • Manufactured to meet industry reliability standards, ensuring consistent operation in demanding environments.
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DDTA122TU-7-F Overview

The DDTA122TU-7-F is a high-performance dual NPN transistor array designed for precision amplification and switching applications. Featuring matched transistor pairs with complementary electrical characteristics, this device ensures consistent gain and low noise operation, making it ideal for analog circuit design. Packaged in a compact SOT-363 form factor, it supports efficient PCB layout in space-constrained environments. The device is optimized for reliability and thermal stability, offering engineers a robust solution for signal amplification and low-level switching tasks. For detailed technical support and sourcing, visit IC Manufacturer.

DDTA122TU-7-F Technical Specifications

Parameter Specification
Transistor Type Dual NPN
Package SOT-363
Collector-Emitter Voltage (VCEO) 50 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 150 mA (max)
DC Current Gain (hFE) 100 to 300
Transition Frequency (fT) 100 MHz (typical)
Operating Temperature Range -55??C to +150??C
Power Dissipation (Ptot) 300 mW

DDTA122TU-7-F Key Features

  • Matched Dual NPN Transistors: Provides consistent gain and low offset voltage, improving linearity in analog signal processing circuits.
  • Compact SOT-363 Package: Enables high-density PCB layouts and space-saving designs without compromising thermal performance.
  • High Transition Frequency: Supports high-speed switching and amplification up to 100 MHz, suitable for RF and high-frequency analog applications.
  • Wide Operating Temperature Range: Ensures reliable operation in harsh industrial environments from -55??C to +150??C.
  • Low Noise Characteristics: Minimizes signal distortion and enhances overall circuit sensitivity for precision measurement systems.

DDTA122TU-7-F Advantages vs Typical Alternatives

This dual NPN transistor array offers superior matching and high gain consistency compared to generic transistor pairs, enhancing accuracy in amplification tasks. Its compact SOT-363 package improves integration and reduces board space, while the robust maximum ratings provide greater reliability under challenging conditions. Compared to typical discrete transistors, it reduces design complexity and improves thermal stability, making it an efficient choice for precision analog and switching applications.

Typical Applications

  • Low-level analog amplifiers requiring matched transistor pairs for consistent gain and low noise, such as sensor signal conditioning and instrumentation amplifiers.
  • High-frequency switching circuits where fast response and reliable transistor matching enhance performance.
  • Complementary transistor stages in audio preamplifiers and small-signal amplification circuits.
  • General-purpose discrete component replacement in compact industrial control and monitoring systems.

DDTA122TU-7-F Brand Info

The DDTA122TU-7-F is a product from a leading semiconductor manufacturer known for quality discrete components optimized for industrial and automotive electronics. This device embodies the brand??s commitment to delivering precision transistor arrays with tight parameter matching, high reliability, and robust thermal characteristics. Designed to meet rigorous industrial standards, it supports engineers in developing compact, high-performance analog and switching circuits.

FAQ

What is the maximum collector current rating of this transistor array?

The maximum collector current for each transistor in the array is 150 mA. This rating ensures the device can handle moderate load currents typical in signal amplification and switching applications without degradation.

Can this device operate at high frequencies?

Yes

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