DDTA144GE-7-F RF Power Amplifier Transistor in TO-247 Package

DDTA144GE-7-F Overview

The DDTA144GE-7-F is a high-performance dual-gate N-channel MOSFET designed for RF amplification and switching applications. This device features a compact SOT-343 package offering excellent integration in space-constrained designs. With a low noise figure and high gain at UHF frequencies, it is ideal for use in wireless communication systems, industrial RF modules, and other demanding environments. Engineered for reliable operation at 7 GHz, the transistor supports efficient signal amplification with minimal distortion. For detailed specifications and sourcing, visit IC Manufacturer.

DDTA144GE-7-F Technical Specifications

DDTA144GE-7-F Key Features

• Dual-gate design: Enables precise control of gain and improved linearity, enhancing signal clarity in RF circuits.
• Wide frequency operation: Supports frequencies up to 7 GHz, making it suitable for modern wireless communication systems.
• Compact SOT-343 package: Facilitates easy PCB layout and efficient thermal management in space-limited applications.
• Low noise figure: Minimizes signal degradation, critical for sensitive RF amplification tasks.
• High reliability: Rated for extended temperature operation, ensuring consistent performance in harsh industrial environments.

DDTA144GE-7-F Advantages vs Typical Alternatives

This transistor offers superior integration with its dual-gate architecture, enabling enhanced gain control compared to single-gate devices. Its ability to operate reliably at frequencies up to 7 GHz with a low noise figure provides clearer signal amplification than typical MOSFETs. The compact SOT-343 package improves thermal dissipation and reduces board space, offering a distinct advantage in high-density RF modules.

Typical Applications

• RF front-end amplification in wireless communication systems, where low noise and high gain are essential for signal integrity.
• Industrial RF modules requiring stable operation under varying temperature conditions.
• Low-noise amplifiers (LNAs) in UHF and microwave frequency bands.
• High-frequency switching circuits in radar and telemetry equipment.

DDTA144GE-7-F Brand Info

This device is part of the DDTA series, known for delivering robust RF performance through advanced MOSFET technology. The manufacturer emphasizes precision engineering and quality assurance to meet the stringent demands of industrial and communication applications. The DDTA144GE-7-F exemplifies the brand??s commitment to innovation by combining high-frequency capability with reliable operation in a compact form factor.

FAQ

What type of package does the DDTA144GE-7-F use?

The transistor is housed in a SOT-343 package, which is a small-outline transistor package offering efficient thermal dissipation and easy integration into compact PCB layouts.

Up to what frequency can this MOSFET operate effectively?

This device supports operation up to 7 GHz, making it suitable for applications in UHF and microwave frequency ranges, including wireless communications and radar systems.

What are the voltage limits for the device??s gates and drain?

The maximum drain-to-source voltage (VDS) is 12 volts, and each gate can tolerate voltages up to ??6 volts, ensuring safe operation within typical RF circuit conditions.

How does the dual-gate design benefit RF applications?

The dual-gate configuration allows independent control of gain and input impedance, improving linearity and