DDTC114GE-7-F Phototransistor Sensor – Through-Hole Package, Light Detection

DDTC114GE-7-F Overview

The DDTC114GE-7-F is a high-performance dual NPN transistor designed for robust switching and amplification in industrial and consumer electronics. Featuring matched electrical characteristics and a compact SOT-363 package, this device ensures reliable operation under varying load conditions. Its low saturation voltage and high current gain make it ideal for efficient signal processing and power management tasks. Engineers and sourcing specialists can rely on this transistor for consistent performance in demanding environments, supported by precise manufacturing and quality control standards from IC Manufacturer.

DDTC114GE-7-F Technical Specifications

DDTC114GE-7-F Key Features

• Dual matched NPN transistors: Provides consistent electrical characteristics for balanced circuit design and improved reliability.
• Low collector-emitter saturation voltage: Enhances switching efficiency and reduces power loss in switching applications.
• High gain bandwidth product: Supports high-speed switching and amplification up to 100 MHz, suitable for RF and analog circuits.
• Compact SOT-363 package: Enables space-saving PCB layouts with excellent thermal performance.
• Wide operating temperature range: Ensures stable operation in harsh industrial and automotive environments.
• Low noise characteristics: Improves signal integrity in sensitive analog front-ends.

DDTC114GE-7-F Advantages vs Typical Alternatives

This transistor offers superior integration by combining two matched NPN transistors in a single, compact package, reducing board space and assembly complexity. Its low saturation voltage and high current gain improve power efficiency and switching accuracy compared to discrete transistor pairs. The wide operating temperature range and robust electrical parameters ensure reliable performance in industrial-grade applications, making it a preferred choice over typical single-transistor solutions.

Typical Applications

• Signal amplification and switching in industrial control circuits, where matched transistor pairs enable precise analog signal processing and improved noise immunity.
• High-frequency switching applications in communication systems requiring fast response and stable gain up to 100 MHz.
• Battery-powered devices and portable electronics benefiting from low power dissipation and compact footprint for extended operation time and miniaturized designs.
• Automotive and harsh environment electronics needing reliable operation under wide temperature variations and transient voltage conditions.

DDTC114GE-7-F Brand Info

Manufactured by a leading semiconductor supplier, this dual NPN transistor device exemplifies the company??s commitment to quality and precision in transistor technology. Designed for demanding industrial and consumer applications, it incorporates advanced fabrication techniques to deliver consistent electrical performance and reliability. The product is part of a broader portfolio aimed at enabling efficient, compact, and robust electronic designs across multiple sectors.

FAQ

What package type does the DDTC114GE-7-F use, and why is it beneficial?

The device uses a SOT-363 small-outline transistor package, which offers a compact footprint suitable for high-density PCB layouts. This package also provides improved thermal dissipation and mechanical robustness, enhancing reliability in space-constrained applications.

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