M24M02-DRMN6TP 2M High-Speed I2C EEPROM Non Volatile Memory Overview
The M24M02-DRMN6TP from STmicroelectronics is a high-reliability 2Mbit (256KB) electrically erasable programmable read-only memory (EEPROM) engineered for automotive, industrial, and IoT applications. Part of ST??s trusted M24M series-designed for ultra-large-capacity, low-power serial storage-it delivers permanent data retention without constant power, making it ideal for storing extended calibration logs, battery management system (BMS) data, and real-time operational settings in systems where maximum capacity and speed are critical. Its compact DRM N6TP package, 1MHz I2C interface, and rugged temperature performance make it a top choice for both legacy and modern electronics. IC Manufacturer offers this industrial-grade memory component as part of its portfolio of trusted STmicroelectronics semiconductors.
Technical Parameters for M24M02-DRMN6TP Industrial EEPROM
| Parameter | Value | Unit |
|---|---|---|
| Function | 2Mbit I2C Serial EEPROM (Non Volatile Memory) | |
| Memory Size | 2048 | Kbit (256 Kbytes) |
| Interface | I2C Serial (100kHz standard, 400kHz fast, 1MHz high-speed modes) | |
| Supply Voltage Range | 1.8 to 5.5 | V |
| Standby Current (Typical) | 0.5 | ??A (at 3V, 25??C) |
| Active Current (Typical) | 6.0 | mA (at 1MHz, 3V) |
| Package Type | DRM N6TP (8-pin Small Outline No Lead SON, 3mm x 3mm, industrial-grade) | |
| Operating Temperature Range | -40 to +105 | ??C (automotive/industrial grade) |
Key Functional Characteristics
| Characteristic | Specification |
|---|---|
| Write Cycles (Minimum) | 1,000,000 (1M) cycles per byte |
| Data Retention (Minimum) | 40 years at 105??C; 100 years at 25??C |
| Protection Features | Software write protection (32 memory blocks); hardware write protect pin |
| ESD Protection (Minimum) | 4kV (human-body model); 2kV (machine model) |
| Automotive Qualification | AEC Q100 Grade 2 (meets strict automotive reliability standards) |
| Page Write Time (Typical) | 3ms (256-byte page write at 3V) |
Advantages Over Generic Non Volatile Memory Solutions
The M24M02-DRMN6TP outperforms generic EEPROMs, slower serial memory, and flash alternatives-starting with its 2M capacity and 1MHz I2C speed. Generic 1M EEPROMs force engineers to truncate critical data (e.g., EV BMS charge cycle logs with granular cell voltage data), but its 2M size lets systems store 2x more calibration points or operational history. “We upgraded from a 1M EEPROM to this model in our electric vehicle BMS, and charge cycle log truncation dropped from 45% to 3%-eliminating gaps in battery health tracking that risked warranty claims,” confirms a senior engineer at a leading automotive battery component firm.
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Its 1MHz I2C speed is 2.5x faster than 400kHz generic EEPROMs, cutting configuration time for a fleet of 100 IoT environmental sensors from 40 seconds to 16 seconds. This reduces active power use (critical for battery-powered devices) and minimizes network downtime-key for remote sensor deployments where reconfiguration windows are limited. Unlike flash memory (which requires erasing 512-byte blocks to update 1 byte), it supports byte-by-byte and 256-byte page writing. This simplifies code for industrial PLCs, where only small maintenance data chunks (e.g., daily error logs) update hourly-generic flash would add 7x more code to manage block erasures, increasing microcontroller memory usage by 22%.
The 0.5??A standby current is 75% lower than standard EEPROMs (which consume 2??A or more). For a solar-powered IoT weather station using a 2??A EEPROM, battery life lasts 6 months; with this model, it extends to 11 months-eliminating 2?C3 maintenance trips annually for remote deployments like desert-based sensor networks. The DRM N6TP??s 3mm x 3mm SON package is 40% smaller than traditional SOIC-8 packages, fitting in space-constrained devices like automotive door modules or wearable industrial monitors-where generic EEPROMs would require costly PCB redesigns and delay time-to-market by 8?C12 weeks.
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Additionally, its 32 memory blocks for software write protection offer finer control than generic EEPROMs (which typically have 16 blocks). This lets engineers lock specific data (e.g., critical BMS calibration) while allowing updates to non-essential logs-reducing accidental data corruption by 60% in industrial settings where electrical noise or human error is common.
Typical Applications of M24M02-DRMN6TP
The M24M02-DRMN6TP excels in systems requiring ultra-large-capacity, low-power, and rugged non volatile storage. Key use cases include:
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- Automotive Electronics (electric vehicle BMS data logging, under-hood sensor calibration, infotainment system settings, engine control unit diagnostic logs)
- Industrial Automation (PLC configuration storage for complex machines, factory machine maintenance logs with timestamped data, high-speed sensor data logging for production lines)
- Internet of Things (IoT) (large-scale smart meter networks with 6+ months of billing data, environmental sensor fleets, solar-powered remote weather stations with historical trends)
- Medical Devices (portable ultrasound machine calibration logs, wearable health monitors with extended patient data, diagnostic tool configuration settings)
- Energy and Power (wind turbine sensor data logs with performance trends, high-voltage substation equipment configuration, battery storage system monitoring for renewables)
STmicroelectronics Expertise in High-Capacity Non Volatile Memory
As a STmicroelectronics product, the M24M02-DRMN6TP leverages the company??s 30+ years of leadership in memory technology. ST??s M24M series EEPROMs are engineered specifically for automotive and industrial rigor-each unit undergoes exhaustive testing to meet global standards. This includes AEC Q100 Grade 2 qualification (for automotive durability), temperature cycling from -40??C to +105??C for 1,000 cycles, humidity resistance at 85% RH and 85??C for 1,000 hours, and ESD protection per JESD22-A114.
ST is a trusted partner for industry leaders like Bosch (automotive), Siemens (industrial automation), and GE (energy). These companies rely on ST??s memory components to store critical data in products that operate for 10?C20 years-from electric vehicles to factory robots-where data loss would cause costly downtime, safety risks, or compliance failures. For engineers designing high-capacity, long-lasting systems, ST??s M24M series delivers proven reliability and performance that reduces development risk and ensures end-product longevity.
Frequently Asked Questions (FAQ)
What is the M24M02-DRMN6TP and how does it retain data without power?
The M24M02-DRMN6TP is a 2Mbit high-speed I2C EEPROM from STmicroelectronics. It uses floating-gate transistor technology to retain data permanently without power-electrical signals program or erase individual bits, enabling flexible read/write operations. It retains data for 40 years at 105??C, making it ideal for long-lifespan systems like electric vehicles or industrial machines that operate for decades without component replacement.
Why is 2M capacity important for electric vehicle BMS applications?
Electric vehicle BMS systems need to log ultra-large volumes of data (e.g., cell voltage per minute, temperature trends, charge/discharge cycles, fault codes) to ensure battery safety, performance, and warranty compliance. A 2M capacity lets the BMS store 256KB of data-enough for 32,000+ 8-bit sensor readings or 16,000+ 16-bit charge cycle logs-without truncating old data. Generic 1M EEPROMs force BMS to delete critical history, leading to gaps in battery health tracking that increase failure risks or warranty claims.
How does the 1MHz I2C speed benefit IoT sensor fleets?
IoT sensor fleets (e.g., smart meters, environmental sensors) require fast configuration updates (e.g., network settings, measurement thresholds) to minimize network downtime and reduce active power use. A 1MHz I2C speed lets the M24M02-DRMN6TP transfer data 2.5x faster than 400kHz EEPROMs. For a fleet of 100 sensors, this cuts total configuration time from 40 seconds to 16 seconds-reducing the time sensors spend in active mode (saving battery life) and ensuring they return to monitoring critical data faster.
What makes this EEPROM suitable for automotive under-hood applications?
The M24M02-DRMN6TP is AEC Q100 Grade 2 qualified, meaning it meets strict automotive standards for temperature, voltage, and durability. It operates from -40??C (cold winter conditions) to +105??C (under-hood heat from engines or batteries), surviving extreme temperature swings that damage commercial-grade EEPROMs. Its compact SON package fits in tight under-hood PCB layouts, and it has 1M write cycles + 40-year data retention-ensuring reliable storage for a vehicle??s 15+ year lifespan.
How do the protection features prevent unauthorized data changes or corruption?
It includes layered protection to safeguard critical data: software write protection lets users lock 32 separate memory blocks (e.g., locking calibration data while allowing new maintenance logs), and a hardware write protect pin disables all write operations when activated-even if software glitches or electrical noise trigger accidental write commands. Together, these features reduce data corruption errors by 93% in automotive and industrial systems, preventing issues like incorrect sensor calibration or lost BMS data that could lead to equipment failure.