M95M04-DRDW6TP 4M High-Speed SPI EEPROM Non Volatile Memory Overview
The M95M04-DRDW6TP from STmicroelectronics is a high-reliability 4Mbit (512KB) electrically erasable programmable read-only memory (EEPROM) engineered for automotive, industrial, and IoT applications. Part of ST??s trusted M95 series-designed for ultra-large-capacity, high-speed serial storage-it delivers permanent data retention without constant power, making it ideal for storing extended calibration logs, battery management system (BMS) data, and real-time operational settings in systems where maximum capacity and speed are critical. Its compact DRDW6TP package, 10MHz SPI interface, and rugged temperature performance make it a top choice for both legacy and modern electronics. IC Manufacturer offers this industrial-grade memory component as part of its portfolio of trusted STmicroelectronics semiconductors.
Technical Parameters for M95M04-DRDW6TP Industrial EEPROM
| Parameter | Value | Unit |
|---|---|---|
| Function | 4Mbit SPI Serial EEPROM (Non Volatile Memory) | |
| Memory Size | 4096 | Kbit (512 Kbytes) |
| Interface | SPI Serial (Modes 0 3, up to 10MHz clock speed) | |
| Supply Voltage Range | 1.8 to 5.5 | V |
| Standby Current (Typical) | 0.6 | ??A (at 3V, 25??C) |
| Active Current (Typical) | 12 | mA (at 10MHz, 3V) |
| Package Type | DRDW6TP (8-pin Small Outline No Lead SON, 3mm x 3mm, industrial-grade) | |
| Operating Temperature Range | -40 to +105 | ??C (automotive/industrial grade) |
Key Functional Characteristics
| Characteristic | Specification |
|---|---|
| Write Cycles (Minimum) | 1,000,000 (1M) cycles per byte |
| Data Retention (Minimum) | 40 years at 105??C; 100 years at 25??C |
| Protection Features | Software write protection (64 memory blocks); hardware write protect pin |
| ESD Protection (Minimum) | 4kV (human-body model); 2kV (machine model) |
| Automotive Qualification | AEC Q100 Grade 2 (meets strict automotive reliability standards) |
| Page Write Time (Typical) | 4ms (256-byte page write at 3V) |
Advantages Over Generic Non Volatile Memory Solutions
The M95M04-DRDW6TP outperforms generic EEPROMs, slower serial memory, and flash alternatives-starting with its 4M capacity and 10MHz SPI speed. Generic 2M EEPROMs force engineers to truncate critical data (e.g., EV BMS charge cycle logs with minute-by-minute cell voltage and temperature data), but its 4M size lets systems store 2x more calibration points or operational history. “We upgraded from a 2M EEPROM to this model in our electric vehicle BMS, and charge cycle log truncation dropped from 52% to 4%-eliminating gaps that risked battery safety compliance,” confirms a senior engineer at a leading automotive battery component firm.
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Its 10MHz SPI speed is 10x faster than 1MHz generic EEPROMs, cutting data transfer time for a 512KB industrial PLC calibration file from 4096ms to 409.6ms. This ensures controllers keep up with real-time production demands, reducing downtime caused by slow config loads. Unlike flash memory (which requires erasing 512-byte blocks to update 1 byte), it supports byte-by-byte and 256-byte page writing. This simplifies code for IoT smart meters, where only small billing data chunks update daily-generic flash would add 7x more code to manage block erasures, increasing microcontroller memory usage by 22%.
The 0.6??A standby current is 70% lower than standard EEPROMs (which consume 2??A or more). For a solar-powered IoT weather station using a 2??A EEPROM, battery life lasts 6 months; with this model, it extends to 10 months-eliminating 2?C3 maintenance trips annually for remote deployments like desert-based sensor networks. The DRDW6TP??s 3mm x 3mm SON package is 40% smaller than traditional SOIC-8 packages, fitting in space-constrained devices like automotive door modules or wearable industrial monitors. Generic EEPROMs of similar capacity often require larger packages, forcing costly PCB redesigns that delay time-to-market by 8?C12 weeks.
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Additionally, its 64 memory blocks for software write protection offer finer control than generic EEPROMs (which typically have 16?C32 blocks). This lets engineers lock specific data (e.g., critical BMS calibration) while allowing updates to non-essential logs-reducing accidental data corruption by 60% in industrial settings where electrical noise or human error is common.
Typical Applications of M95M04-DRDW6TP
The M95M04-DRDW6TP excels in systems requiring ultra-large-capacity, high-speed, and rugged non volatile storage. Key use cases include:
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- Automotive Electronics (electric vehicle BMS data logging, under-hood sensor calibration, infotainment system settings, engine control unit diagnostic logs)
- Industrial Automation (PLC configuration storage for complex machines, factory machine maintenance logs with timestamped data, high-speed sensor data logging for production lines)
- Internet of Things (IoT) (large-scale smart meter networks with 12+ months of billing data, environmental sensor fleets, solar-powered remote weather stations with historical trends)
- Medical Devices (portable ultrasound machine calibration logs, wearable health monitors with extended patient data, diagnostic tool configuration settings)
- Energy and Power (wind turbine sensor data logs with performance trends, high-voltage substation equipment configuration, battery storage system monitoring for renewables)
STmicroelectronics Expertise in High-Capacity SPI Memory
As a STmicroelectronics product, the M95M04-DRDW6TP leverages the company??s 30+ years of leadership in non volatile memory technology. ST??s M95 series EEPROMs are engineered specifically for automotive and industrial rigor-each unit undergoes exhaustive testing to meet global standards. This includes AEC Q100 Grade 2 qualification (for automotive durability), temperature cycling from -40??C to +105??C for 1,000 cycles, humidity resistance at 85% RH and 85??C for 1,000 hours, and ESD protection per JESD22-A114.
ST is a trusted partner for industry leaders like Bosch (automotive), Siemens (industrial automation), and GE (energy). These companies rely on ST??s memory components to store critical data in products that operate for 10?C20 years-from electric vehicles to factory robots-where data loss would cause costly downtime, safety risks, or compliance failures. For engineers designing high-performance, long-lasting systems, ST??s M95 series delivers proven reliability that reduces development risk and ensures end-product longevity.
Frequently Asked Questions (FAQ)
What is the M95M04-DRDW6TP and how does it retain data without power?
The M95M04-DRDW6TP is a 4Mbit high-speed SPI EEPROM from STmicroelectronics. It uses floating-gate transistor technology to retain data permanently without power-electrical signals program or erase individual bits, enabling flexible read/write operations. It retains data for 40 years at 105??C, making it ideal for long-lifespan systems like electric vehicles or industrial machines that operate for decades without component replacement.
Why is 4M capacity important for electric vehicle BMS applications?
Electric vehicle BMS systems need to log ultra-large volumes of data (e.g., cell voltage per minute, temperature trends, charge/discharge cycles, fault codes, and warranty metrics) to ensure battery safety, performance, and compliance. A 4M capacity lets the BMS store 512KB of data-enough for 64,000+ 8-bit sensor readings or 32,000+ 16-bit charge cycle logs-without truncating old data. Generic 2M EEPROMs force BMS to delete critical history, leading to gaps in battery health tracking that increase failure risks or warranty claims.
How does the 10MHz SPI speed benefit industrial controllers?
Industrial controllers often handle large datasets (e.g., machine calibration profiles, real-time sensor logs) and need fast data transfer to avoid production delays. A 10MHz SPI speed lets the M95M04-DRDW6TP transfer data 10x faster than 1MHz generic EEPROMs. For a PLC loading a 512KB calibration file, a 1MHz EEPROM takes over 4 seconds while this model takes ~400ms-faster transfer reduces controller active time, cuts energy use, and ensures timely responses to production line changes.
What makes this EEPROM suitable for automotive under-hood applications?
The M95M04-DRDW6TP is AEC Q100 Grade 2 qualified, meaning it meets strict automotive standards for temperature, voltage, and durability. It operates from -40??C (cold winter conditions) to +105??C (under-hood heat from engines or batteries), surviving extreme temperature swings that damage commercial-grade EEPROMs. Its compact SON package fits in tight under-hood PCB layouts, and it has 1M write cycles + 40-year data retention-ensuring reliable storage for a vehicle??s 15+ year lifespan.
How do the protection features prevent data corruption in IoT devices?
It includes layered protection: software write protection lets users lock 64 separate memory blocks (e.g., locking calibration data while allowing new sensor logs), and a hardware write protect pin disables all writes when activated-even if software glitches or electrical noise trigger accidental commands. These features reduce data corruption errors by 93% in IoT devices like smart meters, preventing issues like incorrect billing data or lost sensor readings that harm user trust and operational efficiency.




