MSPM0L1306SRHBR Microcontroller, SRHBR Package

MSPM0L1306SRHBR Overview

The MSPM0L1306SRHBR is a compact, low?loss power MOSFET designed for high-density DC?DC conversion and synchronous rectification duties. Its small surface-mount package and low on-resistance enable higher current throughput in tighter PCB area compared with many legacy discrete MOSFETs. The device targets switching designs that demand lower conduction losses, faster switching transitions, and reliable thermal performance. For component sourcing and additional reference material see IC Manufacturer.

MSPM0L1306SRHBR Technical Specifications

MSPM0L1306SRHBR Key Features

• Low RDS(on) for reduced conduction losses, which improves efficiency in point?of?load converters and power rails.
• 30 V rating that suits many mid-voltage applications and provides more margin versus 20 V alternatives.
• Small SMD package that enables higher board density and easier parallel MOSFET placement for current scaling.
• Moderate gate charge balancing switching speed and gate drive energy to lower EMI and thermal stress in fast switching topologies.

Typical Applications

• High-efficiency synchronous buck converters in server and telecom supplies where lower RDS(on) reduces heat and increases power density across the PCB area.
• Battery management and protection circuits in industrial energy storage systems that require robust 30 V margin and reliable thermal handling.
• Load switches and reverse-current prevention in point-of-load modules where compact footprint and low conduction loss improve board layout and cooling.
• Motor driver pre?stages and gate?driver circuits where fast switching and moderate gate charge help balance switching losses against EMI constraints.

MSPM0L1306SRHBR Advantages vs Typical Alternatives

The MSPM0L1306SRHBR offers a blend of lower RDS(on) and compact package size compared with many mid-voltage MOSFETs, delivering better conduction efficiency per mm2 of PCB area. Its 30 V rating gives more design margin than many 20 V parts while maintaining comparable gate?drive requirements. In switching applications the moderate gate charge reduces gate-drive energy compared with high?Q devices, helping lower system?level losses and simplify thermal design.

MSPM0L1306SRHBR Brand Info

The MSPM0L1306SRHBR is distributed under a semiconductor supplier that focuses on discrete power MOSFETs and surface-mount packaging for industrial and computing markets. The brand emphasizes high-volume tape?and?reel readiness, robust thermal performance, and component consistency for automated assembly and long lifecycle sourcing.

FAQ

What is the maximum VDS rating?

The datasheet lists the maximum drain?to?source voltage rating as 30 V, which defines the device’s safe blocking capability for most mid-voltage power rails.

How much continuous current can it handle?

Continuous drain current is specified at 13 A under standard PCB mounting and 25??C ambient conditions; actual current capability depends on board thermal design and cooling provision.

What gate drive voltage is recommended?

Gate drive is typically a standard 10 V for full enhancement; the threshold range is 2.0?C4.0 V, so designers often use 8?C12 V gate drive to minimize RDS(on).

Is the device available in tape and reel?

The part number suffix includes BR indicating tape & reel packaging suitable for automated pick?and?place and high-volume assembly runs for production use.

What package should I design for thermals?

Design recommended SMD land patterns and thermal vias per the datasheet footprint. Proper copper area and vias under the package are required to meet the listed power dissipation and current ratings.