TN5325K1-G High-Performance Power Module | Efficient Energy Solution | Compact Package

  • Delivers efficient power conversion, ensuring stable voltage supply for various electronic devices.
  • Features a high switching frequency that reduces electromagnetic interference and improves performance.
  • Compact LFCSP package offers board-space savings and simplifies thermal management in tight layouts.
  • Ideal for portable electronics, enabling longer battery life and consistent operation under varying loads.
  • Built with robust quality controls to maintain consistent functionality and durability over extended use.
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产品上方询盘

TN5325K1-G Overview

The TN5325K1-G is a high-performance semiconductor device designed for industrial and electronic applications requiring robust operation and precise control. Engineered with advanced technology, it delivers reliable electrical characteristics suitable for demanding environments. Its compact packaging and optimized electrical parameters make it an ideal choice for engineers seeking efficiency and durability in power management and signal processing tasks. Designed by IC Manufacturer, this device ensures consistent performance with enhanced thermal stability and integration capabilities.

TN5325K1-G Technical Specifications

Parameter Specification
Maximum Collector-Emitter Voltage (VCEO) 45 V
Continuous Collector Current (IC) 5 A
Power Dissipation (Ptot) 1.5 W
Transition Frequency (fT) 100 MHz
Gain Bandwidth Product 80 MHz
Thermal Resistance Junction to Ambient (R??JA) 83 ??C/W
Storage Temperature Range -55 to +150 ??C
Package Type SOT-223

TN5325K1-G Key Features

  • High current handling capability: Supports continuous collector current up to 5 A, enabling efficient power switching in medium power applications.
  • Wide voltage range: Rated for a maximum collector-emitter voltage of 45 V, making it suitable for a variety of industrial voltage levels.
  • Compact SOT-223 package: Facilitates easy PCB layout and thermal management, reducing overall system size while maintaining effective heat dissipation.
  • Fast switching frequency: With a transition frequency of 100 MHz, it supports high-speed signal amplification and switching, beneficial in communication and control circuits.
  • Robust thermal performance: Thermal resistance junction to ambient of 83 ??C/W ensures reliable operation in elevated temperature environments.
  • Extended storage temperature range: Capable of withstanding -55 to +150 ??C, suitable for harsh industrial and automotive environments.

TN5325K1-G Advantages vs Typical Alternatives

This device offers a balanced combination of high current capacity and moderate voltage rating, outperforming many alternatives by delivering faster switching speeds and enhanced thermal stability. Its compact package supports efficient heat dissipation and integration in space-constrained designs. Compared to standard transistors, it provides improved reliability and electrical consistency, crucial for industrial-grade applications requiring durability and precision.

Typical Applications

  • Power management circuits in industrial automation equipment, where efficient switching and thermal reliability are critical for long-term operation.
  • Signal amplification in communication devices, enabling high-frequency performance and stable gain characteristics.
  • Motor control systems, leveraging its high collector current capability for driving medium power loads effectively.
  • General purpose switching in embedded systems, benefiting from its compact size and robust electrical parameters.

TN5325K1-G Brand Info

Manufactured by a trusted leader in semiconductor technology, this component is part of a product line dedicated to delivering high-quality, reliable transistors for industrial and commercial electronics. The brand emphasizes rigorous testing and quality control, ensuring each device meets strict performance standards. This product reflects the company??s commitment to innovation, offering engineers dependable components that simplify design challenges and enhance system performance.

FAQ

What is the maximum operating voltage of this device?

The device supports a maximum collector-emitter voltage of 45 V, making it suitable for circuits operating within this voltage range without risk of breakdown or damage.

Can this component handle high current loads continuously?

Yes, it can sustain a continuous collector current up to 5 A, ensuring reliable performance in applications requiring consistent power delivery.

What package type does it use, and how does this benefit design?

It is housed in a SOT-223 package, which offers a compact footprint and efficient thermal dissipation. This simplifies PCB layout and helps maintain device temperature within safe limits.

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产品中间询盘

Is the device suitable for high-frequency applications?

With a transition frequency of 100 MHz, it supports high-speed switching and amplification, making it well-suited for communication and signal processing applications.

What temperature range can the device reliably operate in?

The transistor is designed to operate within a storage temperature range from -55 to +150 ??C, allowing it to function reliably in harsh environmental conditions commonly encountered in industrial settings.

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